PSMN2R6-60PSQ

Product Category: Power MOSFET

Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: High efficiency, low on-resistance, fast switching speed - Package: TO-220, D2PAK - Essence: Efficient power management - Packaging/Quantity: Tape and reel, 800 units per reel

Specifications: - Voltage Rating: 60V - Current Rating: 100A - On-Resistance: 1.8mΩ - Gate Charge: 45nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain

Functional Features: - Low gate charge for reduced switching losses - Enhanced avalanche capability for improved ruggedness - Suitable for synchronous rectification in DC-DC converters

Advantages and Disadvantages: - Advantages: - High efficiency - Fast switching speed - Low on-resistance - Disadvantages: - Higher cost compared to standard MOSFETs - Sensitive to static electricity

Working Principles: The PSMN2R6-60PSQ operates based on the principle of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the source and drain terminals.

Detailed Application Field Plans: - Switched-mode power supplies - Motor control - Battery protection circuits - LED lighting

Detailed and Complete Alternative Models: - Infineon IPP60R190P6 - Vishay SiHP065N60E

This comprehensive entry provides a detailed overview of the PSMN2R6-60PSQ, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.