2PA1774S,115 Product Overview

Introduction

The 2PA1774S,115 is a semiconductor product belonging to the category of RF transistors. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: RF Transistor
• Use: Amplification of radio frequency signals
• Characteristics: High-frequency operation, low noise figure, high gain
• Package: SOT343 (SC-70)
• Essence: Silicon NPN RF transistor
• Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Frequency Range: 1 MHz to 6 GHz
• Power Gain: 13 dB
• Noise Figure: 0.9 dB
• Collector Current: 50 mA
• Collector-Base Voltage: 20 V
• Operating Temperature Range: -65°C to +150°C

Detailed Pin Configuration

1. Base
2. Emitter
3. Collector

Functional Features

• High power gain for amplifying RF signals
• Low noise figure for minimal signal distortion
• Wide frequency range for versatile applications

Advantages and Disadvantages

Advantages

• High power gain
• Low noise figure
• Wide frequency range

Disadvantages

• Limited collector current
• Restricted operating temperature range

Working Principles

The 2PA1774S,115 operates based on the principles of NPN bipolar junction transistors, where the flow of charge carriers amplifies the input RF signal.

Detailed Application Field Plans

The 2PA1774S,115 is suitable for various applications including: - Cellular base stations - Wireless communication systems - Radar systems - Satellite communication equipment

Detailed and Complete Alternative Models

• 2PA1576Q,115
• 2PA1876R,115
• 2PA1976S,115

In conclusion, the 2PA1774S,115 is a high-performance RF transistor with excellent power gain and low noise figure, making it suitable for a wide range of RF amplification applications.

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