BFG410W,135

Product Overview

Category:

The BFG410W,135 belongs to the category of high-frequency transistors.

Use:

It is commonly used in RF amplification and high-frequency applications.

Characteristics:

• High-frequency operation
• Low noise figure
• High power gain

Package:

The BFG410W,135 is typically available in a SOT343 (SC-70) package.

Essence:

This transistor is essential for amplifying high-frequency signals in various electronic devices.

Packaging/Quantity:

The BFG410W,135 is usually packaged in reels with a quantity of 3000 units per reel.

Specifications

• Frequency Range: 2.1 GHz
• Power Gain: 13 dB
• Collector Current: 100 mA
• Collector-Emitter Voltage: 12 V
• Noise Figure: 1.3 dB

Detailed Pin Configuration

The BFG410W,135 has a standard pin configuration with the following pins: 1. Emitter 2. Base 3. Collector

Functional Features

• High-frequency operation suitable for RF applications
• Low noise figure for improved signal quality
• Compact SOT343 package for space-constrained designs

Advantages

• High power gain
• Low noise figure
• Small form factor

Disadvantages

• Limited collector-emitter voltage compared to some other transistors
• May require additional matching circuitry for optimal performance in certain applications

Working Principles

The BFG410W,135 operates based on the principles of bipolar junction transistors, utilizing its high-frequency capabilities to amplify signals while maintaining low noise levels.

Detailed Application Field Plans

The BFG410W,135 is widely used in: - Wireless communication systems - RF amplifiers - Signal processing circuits

Detailed and Complete Alternative Models

Some alternative models to the BFG410W,135 include: - BFG425W,135 - BFG540W,135 - BFG196,135

In conclusion, the BFG410W,135 is a high-frequency transistor with excellent power gain and low noise figure, making it suitable for various RF applications and wireless communication systems.

[Word Count: 292]