BLF4G20S-110B,112

Product Category: Power Transistor

Basic Information Overview: - Category: Semiconductor - Use: Power amplification in RF applications - Characteristics: High power, high frequency, high gain - Package: SOT539A (LFPAK56D) - Essence: High-performance power transistor for RF amplification - Packaging/Quantity: Tape and reel, 800 units per reel

Specifications: - Frequency Range: 400-2700 MHz - Output Power: 20W - Gain: 17.5 dB - Efficiency: 55% - Voltage: 32V - Current: 14A

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not connected - Pin 5: Thermal pad

Functional Features: - High linearity - Excellent thermal stability - Integrated ESD protection - RoHS compliant

Advantages and Disadvantages: - Advantages: - High power and efficiency - Wide frequency range - Compact package - Disadvantages: - Higher cost compared to lower power transistors - Requires careful thermal management

Working Principles: The BLF4G20S-110B,112 operates based on the principles of field-effect transistors, utilizing its high-frequency capabilities to amplify RF signals with high power and efficiency.

Detailed Application Field Plans: - Cellular base stations - Radar systems - Broadcast transmitters - RF plasma lighting

Detailed and Complete Alternative Models: - BLF6G20LS-110B,112 - BLF4G20LS-110B,112 - BLF4G20LS-110V,112

This comprehensive entry provides a detailed overview of the BLF4G20S-110B,112, covering its category, use, characteristics, packaging, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.