MRF7S18125AHSR5

1. Introduction

The MRF7S18125AHSR5 belongs to the category of RF Power Transistors and is commonly used in high-frequency applications such as radar systems, wireless communication, and industrial heating. This transistor exhibits high power gain, efficiency, and reliability, making it suitable for demanding RF amplification requirements. The package type, essential characteristics, and detailed specifications are outlined below.

2. Basic Information Overview

• Category: RF Power Transistor
• Use: High-frequency amplification in radar systems, wireless communication, and industrial heating applications.
• Characteristics: High power gain, efficiency, and reliability.
• Package: SMD (Surface Mount Device)
• Essence: High-power RF amplification with enhanced efficiency.
• Packaging/Quantity: Typically supplied in tape and reel packaging with quantities varying based on supplier and customer requirements.

3. Specifications

• Frequency Range: 1750 - 1850 MHz
• Output Power: 125 Watts
• Gain: 15 dB
• Efficiency: 55%
• Voltage: 32V
• Current: 14A
• Package Type: NI-1230H-4S

4. Detailed Pin Configuration

The MRF7S18125AHSR5 features a 4-pin configuration: - Pin 1: RF Input - Pin 2: Ground - Pin 3: RF Output - Pin 4: Voltage Supply

5. Functional Features

• High power gain for efficient signal amplification.
• Excellent linearity for accurate signal reproduction.
• Robust construction for reliable performance in demanding environments.
• Thermal management features for effective heat dissipation.

6. Advantages and Disadvantages

Advantages

• High power output capability.
• Enhanced efficiency leading to reduced power consumption.
• Suitable for high-frequency applications.
• Compact SMD package for space-constrained designs.

Disadvantages

• Higher cost compared to lower power transistors.
• Requires careful thermal design due to high power dissipation.

7. Working Principles

The MRF7S18125AHSR5 operates on the principle of amplifying RF signals by controlling the flow of current through its semiconductor material. When a small input signal is applied at the RF input pin, the transistor amplifies it to a higher power level at the RF output pin, enabling efficient transmission or reception of high-frequency signals.

8. Detailed Application Field Plans

This transistor is well-suited for various applications including: - Radar Systems: Providing high-power amplification for radar signal transmission and reception. - Wireless Communication: Enabling efficient amplification in base stations and point-to-point communication systems. - Industrial Heating: Utilized in RF heating systems for industrial processes.

9. Detailed and Complete Alternative Models

• MRF7S18125AHSR4
• MRF7S18125AHSR6
• MRF7S18125AHSR7

In conclusion, the MRF7S18125AHSR5 RF Power Transistor offers high power gain, efficiency, and reliability, making it an ideal choice for high-frequency amplification in various applications.

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