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MRF8HP21080HSR3
Product Overview
Category
The MRF8HP21080HSR3 belongs to the category of high-power RF transistors.
Use
It is used in high-frequency applications such as radar systems, communication equipment, and industrial heating processes.
Characteristics
- High power handling capability
- High frequency operation
- Low distortion
- High efficiency
Package
The MRF8HP21080HSR3 is typically available in a ceramic package with metal flange for efficient heat dissipation.
Essence
The essence of MRF8HP21080HSR3 lies in its ability to amplify high-frequency signals with high power output.
Packaging/Quantity
It is usually packaged individually and quantities may vary based on customer requirements.
Specifications
- Frequency Range: 2.1 - 2.2 GHz
- Power Output: 80 Watts
- Gain: 14 dB
- Efficiency: 55%
- Input/Output Impedance: 50 Ohms
Detailed Pin Configuration
The detailed pin configuration of MRF8HP21080HSR3 includes input, output, and biasing pins for proper integration into RF circuits.
Functional Features
- High power amplification
- Broadband operation
- High linearity
- Thermal stability
Advantages
- High power handling capability
- Wide frequency range
- Low distortion
- Suitable for high-power RF applications
Disadvantages
- Higher cost compared to lower power alternatives
- Requires efficient thermal management due to high power dissipation
Working Principles
The MRF8HP21080HSR3 operates on the principles of RF amplification, utilizing high-power semiconductor technology to amplify input signals with minimal distortion.
Detailed Application Field Plans
The MRF8HP21080HSR3 is well-suited for use in: - Radar systems for long-range detection - Communication equipment for high-power transmission - Industrial heating processes requiring precise RF energy delivery
Detailed and Complete Alternative Models
Some alternative models to MRF8HP21080HSR3 include: - MRF8HP21130HSR5 - MRF8HP21200HSR7 - MRF8HP20950HSR2
In conclusion, the MRF8HP21080HSR3 is a high-power RF transistor designed for demanding applications that require high-frequency amplification with high power output and efficiency.
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What is MRF8HP21080HSR3?
- MRF8HP21080HSR3 is a high-power RF transistor designed for use in technical solutions requiring high-frequency and high-power amplification.
What is the maximum power output of MRF8HP21080HSR3?
- The maximum power output of MRF8HP21080HSR3 is typically around 80 watts.
What frequency range does MRF8HP21080HSR3 cover?
- MRF8HP21080HSR3 covers a frequency range of approximately 2110 to 2170 MHz.
What are the typical applications of MRF8HP21080HSR3?
- MRF8HP21080HSR3 is commonly used in cellular infrastructure, small cell, and other high-power RF amplification applications.
What are the key features of MRF8HP21080HSR3?
- Some key features of MRF8HP21080HSR3 include high gain, high linearity, and high efficiency, making it suitable for demanding RF amplification requirements.
What are the recommended operating conditions for MRF8HP21080HSR3?
- The recommended operating voltage for MRF8HP21080HSR3 is typically around 28 volts, with appropriate biasing and matching networks.
Does MRF8HP21080HSR3 require any special heat dissipation measures?
- Yes, due to its high-power nature, MRF8HP21080HSR3 may require efficient heat sinking or thermal management to ensure proper operation and reliability.
Can MRF8HP21080HSR3 be used in outdoor environments?
- MRF8HP21080HSR3 can be used in outdoor environments, but proper weatherproofing and protection from environmental factors should be considered.
Are there any specific precautions to consider when handling MRF8HP21080HSR3?
- It is important to follow ESD (electrostatic discharge) precautions and proper handling procedures to prevent damage to the device during installation and maintenance.
Where can I find detailed technical specifications and application notes for MRF8HP21080HSR3?
- Detailed technical specifications and application notes for MRF8HP21080HSR3 can typically be found on the manufacturer's website or through authorized distributors.