MRF8S8260HSR3

Product Overview

• Category: RF Power Transistor
• Use: This transistor is designed for use in high-power RF applications, such as radar systems, communication equipment, and industrial heating systems.
• Characteristics: The MRF8S8260HSR3 offers high power gain, efficiency, and ruggedness, making it suitable for demanding RF power amplification requirements.
• Package: The transistor is available in a compact and durable package, ensuring reliable performance in various operating conditions.
• Essence: The essence of the MRF8S8260HSR3 lies in its ability to deliver high-power RF signals with exceptional efficiency and reliability.
• Packaging/Quantity: The transistor is typically supplied in tape and reel packaging for ease of handling and integration into manufacturing processes.

Specifications

• Frequency Range: 806-960 MHz
• Output Power: 60 Watts
• Gain: 17 dB
• Efficiency: 55%
• Voltage: 28V
• Package Type: NI-1230H

Detailed Pin Configuration

The MRF8S8260HSR3 features a 3-pin configuration: 1. Pin 1 (Gate): Input for the RF signal 2. Pin 2 (Drain): Output for the amplified RF signal 3. Pin 3 (Source): Ground connection

Functional Features

• High power gain and efficiency
• Broad frequency range coverage
• Rugged design for reliable operation in harsh environments
• Excellent linearity for accurate signal amplification

Advantages and Disadvantages

Advantages: - High power output capability - Efficient amplification of RF signals - Robust construction for durability

Disadvantages: - Limited frequency range compared to some other RF transistors - Higher cost compared to lower power alternatives

Working Principles

The MRF8S8260HSR3 operates on the principle of amplifying input RF signals using a combination of active and passive components within the transistor. When an RF signal is applied to the gate terminal, the transistor amplifies the signal and delivers it at the output terminal with increased power.

Detailed Application Field Plans

The MRF8S8260HSR3 is well-suited for use in the following applications: - Radar Systems: Providing high-power RF signals for long-range detection - Communication Equipment: Amplifying RF signals for transmission and reception - Industrial Heating Systems: Generating high-frequency RF energy for heating processes

Detailed and Complete Alternative Models

1. MRF8S9260HSR3: Offers higher frequency range coverage
2. MRF8S8260HSR4: Provides enhanced power output capability
3. MRF8S8260HSR2: Lower cost alternative with slightly reduced performance

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This entry provides comprehensive information about the MRF8S8260HSR3, including its basic overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.