PHD18NQ10T,118

Product Overview

• Category: Power MOSFET
• Use: Power switching applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: DFN (Dual Flat No-Lead)
• Essence: Advanced power management solution
• Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Voltage Rating: 100V
• Current Rating: 18A
• RDS(ON): 10mΩ
• Gate Charge: 25nC
• Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

The PHD18NQ10T,118 features a standard pin configuration with the following pins: 1. Gate 2. Drain 3. Source

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for improved efficiency
• Enhanced thermal performance for reliability
• Robust design for rugged applications

Advantages and Disadvantages

Advantages: - High efficiency - Low power dissipation - Wide operating temperature range

Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly

Working Principles

The PHD18NQ10T,118 operates based on the principle of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow in various applications.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of applications including: - Switching power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

• PHD16NQ10T,118
• PHD20NQ10T,118
• PHD18NQ10L,118

Note: The alternative models listed above offer similar performance characteristics and can be considered as substitutes for the PHD18NQ10T,118.

This comprehensive entry provides an in-depth understanding of the PHD18NQ10T,118, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.