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PHD34NQ10T,118
Product Overview
Category
The PHD34NQ10T,118 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications such as voltage regulation and switching circuits.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Low gate drive requirements
Package
The PHD34NQ10T,118 is typically available in a TO-252 (DPAK) package.
Essence
This power MOSFET is essential for efficient power control and management in various electronic devices and systems.
Packaging/Quantity
It is usually packaged in reels or tubes, with varying quantities depending on the supplier.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 34A
- RDS(ON) (Max) @ VGS = 10V: 9.5mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Power Dissipation (PD): 2.5W
Detailed Pin Configuration
The PHD34NQ10T,118 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-state resistance for minimal power loss
- High current-carrying capability
- Fast switching speed for improved efficiency
- Enhanced thermal performance for reliability
Advantages
- Efficient power management
- Reduced heat dissipation
- Improved system performance
- Compact design options
Disadvantages
- Sensitivity to static electricity
- Potential for gate oxide damage if mishandled
- Limited voltage tolerance
Working Principles
The PHD34NQ10T,118 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The PHD34NQ10T,118 is widely used in the following applications: - Switching power supplies - Motor control - DC-DC converters - Battery management systems - LED lighting
Detailed and Complete Alternative Models
Some alternative models to the PHD34NQ10T,118 include: - IRF540N - FDP8870 - STP55NF06L - AOD4184
In conclusion, the PHD34NQ10T,118 power MOSFET offers high-performance characteristics suitable for various power management applications, with several alternative models available for specific design requirements.
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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng PHD34NQ10T,118 trong giải pháp kỹ thuật
What is the PHD34NQ10T,118?
- The PHD34NQ10T,118 is a N-channel MOSFET transistor designed for high-speed switching applications.
What is the maximum drain-source voltage of PHD34NQ10T,118?
- The maximum drain-source voltage of PHD34NQ10T,118 is 100V.
What is the maximum continuous drain current of PHD34NQ10T,118?
- The maximum continuous drain current of PHD34NQ10T,118 is 34A.
What is the on-resistance of PHD34NQ10T,118?
- The on-resistance of PHD34NQ10T,118 is typically 10mΩ.
What are the typical applications of PHD34NQ10T,118?
- PHD34NQ10T,118 is commonly used in power management and motor control applications.
What is the gate threshold voltage of PHD34NQ10T,118?
- The gate threshold voltage of PHD34NQ10T,118 is typically 2.5V.
What is the operating temperature range of PHD34NQ10T,118?
- The operating temperature range of PHD34NQ10T,118 is -55°C to 175°C.
Is PHD34NQ10T,118 suitable for automotive applications?
- Yes, PHD34NQ10T,118 is suitable for automotive applications due to its high current and voltage ratings.
Can PHD34NQ10T,118 be used in high-frequency switching applications?
- Yes, PHD34NQ10T,118 is designed for high-speed switching applications and can be used in high-frequency applications.
What are the key features of PHD34NQ10T,118 that make it suitable for technical solutions?
- The key features of PHD34NQ10T,118 include low on-resistance, high current and voltage ratings, and suitability for high-speed switching applications.