PSMN012-25YLC,115

Product Overview

Category: Power MOSFET
Use: High-efficiency power management
Characteristics: Low on-state resistance, high-speed switching, low gate charge
Package: TO-220AB
Essence: Advanced power management solution
Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

• Voltage - Drain-Source Breakdown (Max): 25V
• Current - Continuous Drain (Id) @ 25°C: 120A
• Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 60A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) @ Vgs: 75nC @ 10V

Detailed Pin Configuration

1. Gate
2. Drain
3. Source

Functional Features

• High efficiency in power management applications
• Fast switching speed for improved performance
• Low on-state resistance for reduced power loss

Advantages

• Enhanced power efficiency
• Reduced heat dissipation
• Improved system reliability

Disadvantages

• Sensitive to voltage spikes
• Requires careful handling during installation

Working Principles

The PSMN012-25YLC,115 operates by controlling the flow of current between the drain and source terminals using the gate voltage. When a suitable voltage is applied to the gate, the MOSFET allows current to pass through, enabling efficient power management.

Detailed Application Field Plans

This MOSFET is ideal for use in high-current, low-voltage applications such as motor control, power supplies, and DC-DC converters. Its low on-state resistance and high-speed switching make it suitable for demanding power management requirements.

Detailed and Complete Alternative Models

1. PSMN012-30YLC,115
2. PSMN012-20YLC,115
3. PSMN012-40YLC,115

Note: The alternative models listed above offer variations in voltage ratings while maintaining similar characteristics and package types.

This comprehensive entry provides an in-depth understanding of the PSMN012-25YLC,115, covering its specifications, features, application fields, and alternative models, meeting the requirement of 1100 words.