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2N5087RLRA
Product Overview
The 2N5087RLRA belongs to the category of bipolar junction transistors (BJTs) and is commonly used for amplification and switching applications. This transistor exhibits characteristics such as high current gain, low noise, and low power consumption. It is typically packaged in a small plastic package with three leads, making it suitable for various electronic circuit designs.
Package Information
- Category: Bipolar Junction Transistor (BJT)
- Use: Amplification and switching
- Characteristics: High current gain, low noise, low power consumption
- Package: Small plastic package with three leads
- Packaging/Quantity: Typically available in reels or tubes containing multiple units
Specifications
The 2N5087RLRA transistor has the following specifications: - Maximum Collector-Emitter Voltage: 50V - Maximum Collector Current: 50mA - DC Current Gain (hFE): 100 - 300 - Power Dissipation: 625mW - Transition Frequency: 150MHz
Detailed Pin Configuration
The 2N5087RLRA transistor has three pins: the emitter, base, and collector. The pin configuration is as follows: - Emitter (E): Pin 1 - Base (B): Pin 2 - Collector (C): Pin 3
Functional Features
The 2N5087RLRA transistor offers the following functional features: - High current gain for amplification purposes - Low noise performance, suitable for sensitive signal processing - Low power consumption, making it energy-efficient
Advantages and Disadvantages
Advantages
- High current gain allows for efficient signal amplification
- Low noise performance ensures accurate signal processing
- Low power consumption contributes to energy efficiency
Disadvantages
- Limited maximum collector current may restrict certain high-power applications
- Moderate transition frequency may limit high-frequency operation
Working Principles
The 2N5087RLRA operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals. This amplification effect forms the basis of its functionality.
Detailed Application Field Plans
The 2N5087RLRA transistor finds application in various fields, including: - Audio amplification circuits - Signal processing and conditioning - Switching circuits in electronic devices - Oscillator circuits for generating specific frequencies
Detailed and Complete Alternative Models
Some alternative models to the 2N5087RLRA include: - BC547B - 2N3904 - 2N2222A - BC548
In summary, the 2N5087RLRA transistor is a versatile component suitable for amplification and switching applications in various electronic circuits. Its high current gain, low noise, and low power consumption make it an essential building block in many electronic designs.
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What is the 2N5087RLRA transistor used for?
- The 2N5087RLRA is a general-purpose PNP bipolar junction transistor commonly used for amplification and switching applications.
What are the key specifications of the 2N5087RLRA transistor?
- The 2N5087RLRA has a maximum collector current (Ic) of 50mA, a maximum collector-emitter voltage (Vce) of 50V, and a maximum power dissipation (Pd) of 625mW.
How can I identify the pinout of the 2N5087RLRA transistor?
- The pinout of the 2N5087RLRA transistor is typically identified as the emitter (E), base (B), and collector (C) pins.
What are some common circuit configurations using the 2N5087RLRA transistor?
- Common circuit configurations include common emitter amplifiers, switch circuits, and signal amplification applications.
What are the typical operating conditions for the 2N5087RLRA transistor?
- The 2N5087RLRA transistor operates within a temperature range of -55°C to 150°C and is suitable for use in various electronic systems.
Can the 2N5087RLRA be used for audio amplifier applications?
- Yes, the 2N5087RLRA can be utilized in low-power audio amplifier circuits due to its amplification capabilities.
Are there any specific considerations for driving inductive loads with the 2N5087RLRA transistor?
- When driving inductive loads, it's important to include a flyback diode to protect the transistor from voltage spikes generated by the inductive load.
What are the typical gain characteristics of the 2N5087RLRA transistor?
- The DC current gain (hfe) of the 2N5087RLRA transistor ranges from 100 to 300 under specified operating conditions.
Can the 2N5087RLRA be used in high-frequency applications?
- While the 2N5087RLRA can function at moderate frequencies, it may not be suitable for high-frequency applications due to its transition frequency limitations.
Where can I find detailed application notes and example circuits for the 2N5087RLRA transistor?
- Detailed application notes and example circuits for the 2N5087RLRA transistor can be found in the manufacturer's datasheet or application-specific reference designs provided by semiconductor companies.