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2N5771_D75Z
Product Overview
- Category: Transistor
- Use: Amplification and switching in electronic circuits
- Characteristics: High voltage, high current capability
- Package: TO-92
- Essence: NPN Bipolar Junction Transistor (BJT)
- Packaging/Quantity: Bulk packaging, quantity varies
Specifications
- Maximum Collector-Emitter Voltage: 160V
- Maximum Collector Current: 1A
- Power Dissipation: 625mW
- Transition Frequency: 30MHz
- Operating Temperature Range: -65°C to 200°C
Detailed Pin Configuration
- Collector (C): Pin 1
- Base (B): Pin 2
- Emitter (E): Pin 3
Functional Features
- High voltage and current capability
- Fast switching speed
- Low noise and distortion
Advantages and Disadvantages
Advantages
- Suitable for high-power applications
- Wide operating temperature range
- Versatile for various circuit designs
Disadvantages
- Sensitive to temperature variations
- Requires careful handling due to static sensitivity
Working Principles
The 2N5771_D75Z operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals, allowing for amplification or switching of signals.
Detailed Application Field Plans
- Audio amplifiers
- Power supply circuits
- Motor control systems
- RF amplifiers
Detailed and Complete Alternative Models
- 2N3904
- BC547
- 2N2222
- BC548
This information provides a comprehensive overview of the 2N5771_D75Z transistor, including its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.
Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng 2N5771_D75Z trong giải pháp kỹ thuật
What is the 2N5771_D75Z transistor used for?
- The 2N5771_D75Z is a general-purpose NPN bipolar junction transistor commonly used for amplification and switching applications.
What are the typical operating conditions for the 2N5771_D75Z?
- The 2N5771_D75Z typically operates at a maximum collector-emitter voltage of 40V and a maximum collector current of 1A.
Can the 2N5771_D75Z be used for audio amplification?
- Yes, the 2N5771_D75Z can be used for small-signal audio amplification due to its low noise and high gain characteristics.
What are some common circuit configurations for the 2N5771_D75Z?
- Common circuit configurations include common emitter, common base, and common collector configurations for various amplification and switching purposes.
Is the 2N5771_D75Z suitable for use in low-power switching applications?
- Yes, the 2N5771_D75Z is suitable for low-power switching applications due to its fast switching speed and moderate power handling capabilities.
What are the thermal considerations when using the 2N5771_D75Z in a design?
- It is important to consider proper heat sinking and thermal management to ensure the 2N5771_D75Z operates within its specified temperature range for reliable performance.
Are there any specific precautions to be taken when designing with the 2N5771_D75Z?
- Precautions should be taken to avoid exceeding the maximum ratings for voltage, current, and power dissipation to prevent damage to the transistor.
Can the 2N5771_D75Z be used in high-frequency applications?
- While the 2N5771_D75Z has moderate frequency capabilities, it may not be suitable for very high-frequency applications due to its transition frequency limitations.
What are the typical gain characteristics of the 2N5771_D75Z?
- The 2N5771_D75Z typically has a high current gain (hFE) ranging from 100 to 300, making it suitable for many amplification applications.
Where can I find detailed specifications and application notes for the 2N5771_D75Z?
- Detailed specifications and application notes for the 2N5771_D75Z can be found in the manufacturer's datasheet and application notes, which provide comprehensive information on its usage and performance characteristics.