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BC808-25LT1

BC808-25LT1

Product Overview

Category: Transistor
Use: Amplification and switching in electronic circuits
Characteristics: Low power, high voltage, NPN bipolar junction transistor
Package: SOT-23
Essence: Small signal transistor for general purpose applications
Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

  • Collector-Emitter Voltage (VCEO): 25V
  • Collector-Base Voltage (VCBO): 30V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 0.5A
  • Power Dissipation (Ptot): 225mW
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  1. Emitter (E)
  2. Base (B)
  3. Collector (C)

Functional Features

  • High voltage capability
  • Low leakage current
  • Fast switching speed
  • Small package size

Advantages and Disadvantages

Advantages: - Suitable for low power applications - Wide operating temperature range - High transition frequency

Disadvantages: - Limited collector current capacity - Relatively low power dissipation rating

Working Principles

The BC808-25LT1 operates as a current-controlled switch or amplifier. When a small current flows into the base (B) terminal, it controls a larger current flow between the collector (C) and emitter (E) terminals. This allows the transistor to amplify signals or act as a switch in electronic circuits.

Detailed Application Field Plans

  1. Audio Amplification: Used in audio amplifiers and preamplifiers due to its low power and small signal capabilities.
  2. Signal Switching: Employed in electronic switches for signal routing in communication systems.
  3. Sensor Interface Circuits: Utilized in sensor interface circuits for signal conditioning and amplification.

Detailed and Complete Alternative Models

  1. BC807-25LT1G: Similar specifications with slightly different characteristics
  2. 2N3904: General-purpose NPN transistor with comparable ratings
  3. MMBT3904: Surface mount equivalent with similar performance

This comprehensive entry provides an in-depth understanding of the BC808-25LT1 transistor, including its specifications, features, applications, and alternative models.

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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng BC808-25LT1 trong giải pháp kỹ thuật

  1. What is BC808-25LT1?

    • BC808-25LT1 is a PNP bipolar junction transistor (BJT) designed for general purpose amplifier and switching applications.
  2. What are the key specifications of BC808-25LT1?

    • The key specifications include a maximum collector current of 0.5A, a maximum collector-emitter voltage of 25V, and a maximum power dissipation of 625mW.
  3. What are the typical applications of BC808-25LT1?

    • Typical applications include audio amplification, signal switching, and general purpose switching circuits.
  4. What is the pin configuration of BC808-25LT1?

    • BC808-25LT1 has three pins: the emitter, base, and collector, which are labeled E, B, and C, respectively.
  5. What is the gain (hFE) of BC808-25LT1?

    • The typical DC current gain (hFE) of BC808-25LT1 ranges from 110 to 800 at a collector current of 100mA.
  6. What are the recommended operating conditions for BC808-25LT1?

    • The recommended operating conditions include a maximum collector current of 0.5A, a maximum collector-emitter voltage of 25V, and an operating temperature range of -55°C to 150°C.
  7. Can BC808-25LT1 be used in low-power audio amplifier circuits?

    • Yes, BC808-25LT1 is suitable for use in low-power audio amplifier circuits due to its moderate current and voltage ratings.
  8. Is BC808-25LT1 suitable for high-frequency applications?

    • No, BC808-25LT1 is not specifically designed for high-frequency applications due to its moderate transition frequency.
  9. What are the alternatives to BC808-25LT1 for similar applications?

    • Alternatives include BC807-25LT1, BC807-40LT1, and BC807-16LT1, which are also PNP transistors with similar characteristics.
  10. Are there any specific layout considerations when using BC808-25LT1 in a circuit?

    • It is important to minimize lead lengths and keep input and output traces as short as possible to reduce parasitic effects and ensure stable operation of the transistor.