NGTB03N60R2DT4G

Introduction

The NGTB03N60R2DT4G is a power MOSFET belonging to the category of electronic components. This device is widely used in various applications due to its unique characteristics and functional features.

Basic Information Overview

• Category: Power MOSFET
• Use: The NGTB03N60R2DT4G is utilized for power switching applications in electronic circuits.
• Characteristics: This MOSFET offers low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The NGTB03N60R2DT4G is typically available in a TO-263-3 package.
• Essence: Its essence lies in providing efficient power switching capabilities for electronic devices.
• Packaging/Quantity: It is commonly packaged in reels with varying quantities based on manufacturer specifications.

Specifications

• Voltage Rating: 600V
• Current Rating: 3A
• On-State Resistance: 1.9Ω
• Gate Charge: 8.5nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The NGTB03N60R2DT4G follows a standard pin configuration for a TO-263-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• Low On-State Resistance: Enables efficient power conduction.
• High Switching Speed: Facilitates rapid switching operations.
• Low Gate Charge: Minimizes drive requirements and enhances efficiency.

Advantages and Disadvantages

Advantages

• High Efficiency: Due to low on-state resistance and gate charge.
• Fast Switching: Enhances overall performance in time-critical applications.

Disadvantages

• Sensitivity to Overvoltage: Requires careful consideration in high-voltage applications.

Working Principles

The NGTB03N60R2DT4G operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity within the device.

Detailed Application Field Plans

This MOSFET finds extensive use in various applications, including: - Switched-Mode Power Supplies - Motor Control Circuits - LED Lighting Systems - Solar Inverters

Detailed and Complete Alternative Models

• IRF840: A comparable power MOSFET with similar voltage and current ratings.
• FDPF18N50T: Offers an alternative solution with different characteristics for specific applications.

In conclusion, the NGTB03N60R2DT4G serves as a crucial component in modern electronic systems, providing efficient power switching capabilities across diverse applications.

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