NSVMMUN2135LT1G

Product Overview

• Category: Transistor
• Use: Power switching applications
• Characteristics: High voltage, low power consumption
• Package: SOT-23
• Essence: NPN Bipolar Transistor
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Voltage - Collector Emitter Breakdown (Max): 350V
• Current - Collector (Ic) (Max): 100mA
• Power - Max: 625mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
• Transition Frequency: 30MHz
• Operating Temperature: -55°C ~ 150°C

Detailed Pin Configuration

1. Base (B)
2. Emitter (E)
3. Collector (C)

Functional Features

• High voltage capability
• Low leakage current
• Fast switching speed
• Small package size

Advantages and Disadvantages

Advantages

• Suitable for high voltage applications
• Low power consumption
• Compact package size

Disadvantages

• Limited maximum current rating
• Moderate transition frequency

Working Principles

The NSVMMUN2135LT1G is an NPN bipolar transistor that operates by controlling the flow of current between its collector and emitter terminals. When a small current is applied to the base terminal, it allows a larger current to flow from the collector to the emitter, enabling it to act as a switch or amplifier in various electronic circuits.

Detailed Application Field Plans

The NSVMMUN2135LT1G is commonly used in power supply circuits, LED lighting drivers, and other applications requiring high voltage switching with low power dissipation. Its compact package and high voltage capability make it suitable for space-constrained designs where efficient power management is essential.

Detailed and Complete Alternative Models

• BC337
• 2N3904
• MMBT3904
• 2N2222

Note: The above list is not exhaustive and there are several alternative models available in the market.

This comprehensive entry provides detailed information about the NSVMMUN2135LT1G, covering its product overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.