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UNR221600L
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UNR221600L

Product Overview

Belongs to: Semiconductor Devices
Category: Transistor
Use: Amplification and Switching
Characteristics: High voltage, high speed, low saturation voltage
Package: TO-220F
Essence: NPN Silicon Epitaxial Planar Transistor
Packaging/Quantity: Bulk packaging, quantity varies

Specifications

  • Collector-Emitter Voltage (VCEO): 400V
  • Collector Current (IC): 10A
  • DC Current Gain (hFE): 15 - 60
  • Transition Frequency (fT): 30MHz
  • Power Dissipation (PD): 50W

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High voltage capability
  • Fast switching speed
  • Low saturation voltage

Advantages and Disadvantages

Advantages: - Suitable for high power applications - Fast response time - Low power dissipation

Disadvantages: - Limited frequency range - Sensitivity to temperature variations

Working Principles

The UNR221600L operates as an NPN transistor, where the flow of current is controlled by the voltage applied to the base terminal. When a small current flows into the base, it allows a larger current to flow from the collector to the emitter, enabling amplification or switching functions.

Detailed Application Field Plans

The UNR221600L is commonly used in power supply circuits, audio amplifiers, motor control circuits, and electronic ballasts due to its high voltage and current capabilities.

Detailed and Complete Alternative Models

  1. UNR2212L
  2. UNR2213L
  3. UNR2214L

Note: The alternative models listed above are similar in characteristics and package type.

This comprehensive entry provides detailed information about the UNR221600L, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng UNR221600L trong giải pháp kỹ thuật

  1. What is UNR221600L?

    • UNR221600L is a high-power, low-resistance NPN silicon epitaxial transistor designed for use in various technical solutions.

  2. What are the key features of UNR221600L?

    • The key features of UNR221600L include high power dissipation, low collector-emitter saturation voltage, and low equivalent on-resistance.

  3. In what technical solutions can UNR221600L be used?

    • UNR221600L can be used in applications such as power supply circuits, motor control, audio amplifiers, and electronic ballasts.

  4. What is the maximum power dissipation of UNR221600L?

    • The maximum power dissipation of UNR221600L is typically 2 watts.

  5. What is the collector current rating of UNR221600L?

    • The collector current rating of UNR221600L is typically 1.5 amperes.

  6. What is the typical collector-emitter saturation voltage of UNR221600L?

    • The typical collector-emitter saturation voltage of UNR221600L is around 0.5 volts.

  7. Does UNR221600L require any special heat sinking or thermal management?

    • Yes, UNR221600L may require appropriate heat sinking or thermal management to ensure optimal performance and reliability.

  8. Can UNR221600L be used in high-frequency applications?

    • UNR221600L is not specifically designed for high-frequency applications and may not be suitable for such purposes.

  9. Is UNR221600L suitable for automotive applications?

    • UNR221600L is not specifically rated for automotive applications and should be used within its specified operating conditions.

  10. Where can I find detailed technical specifications and application notes for UNR221600L?

    • Detailed technical specifications and application notes for UNR221600L can be found in the product datasheet provided by the manufacturer.