UNR5111G0L

Product Overview

• Belongs to: Electronic Components
• Category: Transistor
• Use: Amplification and switching of electronic signals
• Characteristics: High voltage, high current capability, low saturation voltage
• Package: TO-220F
• Essence: Power transistor for general-purpose applications
• Packaging/Quantity: Bulk packaging, 50 units per pack

Specifications

• Voltage Rating: 100V
• Current Rating: 15A
• Power Dissipation: 75W
• Gain (hFE): 30-240
• Frequency: 2MHz
• Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

• Pin 1: Emitter
• Pin 2: Collector
• Pin 3: Base

Functional Features

• High voltage capability
• Low collector-emitter saturation voltage
• Fast switching speed
• Wide frequency range

Advantages

• Suitable for a wide range of applications
• High power dissipation capability
• Low saturation voltage

Disadvantages

• Limited frequency range compared to specialized transistors
• Relatively high input capacitance

Working Principles

The UNR5111G0L operates based on the principles of bipolar junction transistors. It amplifies and switches electronic signals by controlling the flow of current between its emitter and collector terminals through the application of a small current at its base terminal.

Detailed Application Field Plans

• Audio amplifiers
• Power supplies
• Motor control circuits
• LED lighting drivers
• Switching regulators

Detailed and Complete Alternative Models

• 2N3055
• TIP31C
• MJ15003
• MJE13005

This comprehensive entry provides detailed information about the UNR5111G0L, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.