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UNR521N00L

UNR521N00L

Product Overview

Belongs to: Integrated Circuits
Category: Power Transistors
Use: Amplification and Switching
Characteristics: High power handling, low voltage drop, compact size
Package: TO-220F
Essence: NPN Silicon Epitaxial Planar Transistor
Packaging/Quantity: Tape & Reel, 1000 units per reel

Specifications

  • Collector-Emitter Voltage (VCEO): 60V
  • Collector Current (IC): 5A
  • Power Dissipation (PD): 1.25W
  • Transition Frequency (fT): 30MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed
  • Low noise

Advantages

  • Suitable for high-speed switching applications
  • Compact size allows for space-efficient designs
  • Low power dissipation

Disadvantages

  • Limited maximum voltage and current ratings compared to some alternatives
  • Sensitive to overvoltage conditions

Working Principles

The UNR521N00L operates as a bipolar junction transistor (BJT), utilizing the interaction of minority charge carriers in a semiconductor to amplify or switch electronic signals. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals, enabling amplification or switching functions.

Detailed Application Field Plans

  1. Audio Amplification: The UNR521N00L can be used in audio amplifier circuits due to its high current gain and low noise characteristics.
  2. Motor Control: Its fast switching speed makes it suitable for motor control applications, such as in small appliances and robotics.
  3. LED Lighting: The transistor's low power dissipation and compact size make it ideal for driving LED lighting systems.

Detailed and Complete Alternative Models

  1. 2N3904: Similar NPN transistor with lower power handling but widely available and cost-effective.
  2. BC547: General-purpose NPN transistor with lower current and voltage ratings but versatile in various applications.
  3. MJE3055: Higher power NPN transistor suitable for more demanding applications but larger in size.

This comprehensive entry provides an in-depth understanding of the UNR521N00L, covering its specifications, features, applications, and alternatives within the integrated circuits category.

Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng UNR521N00L trong giải pháp kỹ thuật

  1. What is UNR521N00L?

    • UNR521N00L is a high-speed switching NPN transistor used in various technical solutions.
  2. What are the key features of UNR521N00L?

    • The key features include high-speed switching, low saturation voltage, and high reliability.
  3. What are the typical applications of UNR521N00L?

    • Typical applications include power management, motor control, and general purpose switching.
  4. What is the maximum collector current of UNR521N00L?

    • The maximum collector current is typically 1.5A.
  5. What is the maximum collector-emitter voltage of UNR521N00L?

    • The maximum collector-emitter voltage is typically 160V.
  6. What is the thermal resistance of UNR521N00L?

    • The thermal resistance is typically 125°C/W.
  7. Is UNR521N00L suitable for high-frequency applications?

    • Yes, it is suitable for high-frequency applications due to its high-speed switching capability.
  8. What is the operating temperature range of UNR521N00L?

    • The operating temperature range is typically -55°C to 150°C.
  9. Does UNR521N00L require external protection diodes?

    • Yes, external protection diodes may be required depending on the application and circuit design.
  10. Where can I find the detailed datasheet for UNR521N00L?

    • The detailed datasheet can be found on the manufacturer's website or through authorized distributors.