BR24G32FVJ-3GTE2

Product Overview

Category: Integrated Circuit (IC)

Use: Data storage and retrieval

Characteristics: - Non-volatile memory - High-speed read/write operations - Low power consumption - Wide operating voltage range - Compact package size

Package: SOP-8 (Small Outline Package)

Essence: The BR24G32FVJ-3GTE2 is a high-performance serial EEPROM (Electrically Erasable Programmable Read-Only Memory) IC. It provides non-volatile storage of digital data, which can be accessed and modified by electronic devices.

Packaging/Quantity: The BR24G32FVJ-3GTE2 is typically sold in reels containing 2500 units per reel.

Specifications

• Memory Capacity: 32 kilobits (4 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating Voltage Range: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Endurance: 1 million cycles
• Data Retention: 100 years

Detailed Pin Configuration

The BR24G32FVJ-3GTE2 features an SOP-8 package with the following pin configuration:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VSS | Ground | | 2 | SDA | Serial Data Input/Output | | 3 | SCL | Serial Clock Input | | 4 | WP | Write Protect | | 5 | VCC | Power Supply Voltage | | 6 | NC | No Connection | | 7 | NC | No Connection | | 8 | VSS | Ground |

Functional Features

• High-speed data transfer up to 400 kHz
• Page write mode for efficient programming
• Software write protection using the WP pin
• Self-timed programming cycle
• Sequential read function for faster access
• Built-in write cycle completion detection

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data retention even during power loss - Wide operating voltage range allows compatibility with various systems - Low power consumption extends battery life in portable devices - Compact package size enables space-saving designs - High-speed read/write operations enhance overall system performance

Disadvantages: - Limited storage capacity compared to other memory technologies - Relatively higher cost per kilobit compared to larger memory ICs - Susceptible to electromagnetic interference (EMI) due to its small size

Working Principles

The BR24G32FVJ-3GTE2 utilizes EEPROM technology, which allows for electrically erasing and reprogramming of data. It consists of a grid of memory cells that can store binary information as charge levels. The stored data can be accessed and modified by sending specific commands through the I2C interface.

During write operations, the data is transferred from the input buffer to the memory cells. Reading involves retrieving the stored charge levels and converting them back into digital data. The IC's internal circuitry ensures reliable and accurate data storage and retrieval.

Detailed Application Field Plans

The BR24G32FVJ-3GTE2 finds applications in various electronic systems, including but not limited to: 1. Consumer electronics (e.g., TVs, audio players) 2. Automotive electronics (e.g., infotainment systems, instrument clusters) 3. Industrial automation (e.g., control systems, sensors) 4. Medical devices (e.g., patient monitoring equipment, diagnostic devices) 5. Smart home technology (e.g., smart meters, home automation systems)

Detailed and Complete Alternative Models

1. AT24C32 - Manufactured by Atmel Corporation
2. CAT24C32 - Manufactured by ON Semiconductor
3. M24C32 - Manufactured by STMicroelectronics
4. 24AA32A - Manufactured by Microchip Technology Inc.
5. FM24C32 - Manufactured by Cypress Semiconductor

These alternative models offer similar functionality and specifications to the BR24G32FVJ-3GTE2 and can be considered as alternatives based on specific requirements and availability.

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