BR93L66RFVM-WTR

Product Overview

Category: Integrated Circuit
Use: Non-volatile memory storage
Characteristics: Low power consumption, high reliability
Package: SOP-8 (Small Outline Package)
Essence: EEPROM (Electrically Erasable Programmable Read-Only Memory)
Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Memory Size: 4Kbit
• Interface: Serial I2C
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature: -40°C to 85°C
• Data Retention: 200 years

Detailed Pin Configuration

1. VSS (Ground)
2. SDA (Serial Data)
3. SCL (Serial Clock)
4. WP (Write Protect)
5. VCC (Power Supply)
6. NC (No Connection)
7. NC (No Connection)
8. VSS (Ground)

Functional Features

• Byte Write and Page Write Operation
• Self-timed Write Cycle
• Enhanced ESD/Latch-Up Protection
• Software Write Protection

Advantages and Disadvantages

Advantages: - Low power consumption - High reliability - Small form factor

Disadvantages: - Limited memory size - Slower write speed compared to some alternatives

Working Principles

The BR93L66RFVM-WTR is based on EEPROM technology, allowing for non-volatile data storage. It utilizes a serial I2C interface for communication with the host system. The device operates by performing byte write and page write operations, with a self-timed write cycle ensuring data integrity.

Detailed Application Field Plans

The BR93L66RFVM-WTR is suitable for various applications requiring non-volatile memory storage, such as: - Industrial control systems - Automotive electronics - Consumer electronics - Medical devices

Detailed and Complete Alternative Models

1. AT24C04C-SSHM-T (Microchip Technology Inc.)

   • Category: Integrated Circuit
   • Use: Non-volatile memory storage
   • Characteristics: I2C interface, 4Kbit memory size
   • Package: SOP-8
   • Operating Voltage: 1.7V to 5.5V

2. M24M02-DRMN6TP (STMicroelectronics)

   • Category: Integrated Circuit
   • Use: Non-volatile memory storage
   • Characteristics: Serial SPI interface, 2Mbit memory size
   • Package: SO8N
   • Operating Voltage: 1.8V to 5.5V

3. CAT24C08WI-GT3 (ON Semiconductor)

   • Category: Integrated Circuit
   • Use: Non-volatile memory storage
   • Characteristics: I2C interface, 8Kbit memory size
   • Package: SOIC-8
   • Operating Voltage: 1.7V to 5.5V

In conclusion, the BR93L66RFVM-WTR is a reliable and low-power non-volatile memory solution suitable for various electronic applications. Its compact package and robust features make it an ideal choice for systems requiring EEPROM functionality.

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