GS1535-CFUE3

Product Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: Ceramic Package
Essence: Field-Effect Transistor (FET)
Packaging/Quantity: Tape and Reel, 1000 units per reel

Specifications

• Type: N-Channel Enhancement Mode FET
• Drain-Source Voltage (VDS): 30V
• Gate-Source Voltage (VGS): ±20V
• Drain Current (ID): 150mA
• Power Dissipation (PD): 350mW
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The GS1535-CFUE3 has a three-pin configuration:

1. Drain (D): This pin is connected to the drain terminal of the FET.
2. Gate (G): This pin is connected to the gate terminal of the FET.
3. Source (S): This pin is connected to the source terminal of the FET.

Functional Features

• High gain amplification of weak signals
• Low noise performance for improved signal quality
• Wide operating temperature range for versatile applications
• Compact ceramic package for enhanced durability and thermal dissipation

Advantages

• Excellent signal amplification capabilities
• Low noise performance ensures high-quality output
• Wide operating temperature range allows usage in various environments
• Compact and durable ceramic package enhances reliability

Disadvantages

• Limited maximum drain current capacity
• Restricted voltage range for gate-source operation

Working Principles

The GS1535-CFUE3 is an N-channel enhancement mode FET that operates by controlling the flow of current between the drain and source terminals using the gate voltage. When a positive voltage is applied to the gate terminal, it creates an electric field that attracts electrons from the source to the channel, allowing current to flow between the drain and source. This controlled current amplification enables signal amplification in various electronic circuits.

Detailed Application Field Plans

The GS1535-CFUE3 finds applications in the following fields:

1. Audio Amplifiers: Provides high gain amplification for audio signals with low noise.
2. RF Receivers: Enhances weak radio frequency signals for improved reception.
3. Sensor Circuits: Amplifies weak sensor outputs for accurate measurements.
4. Communication Systems: Boosts signal strength in wireless communication devices.
5. Test and Measurement Equipment: Enables precise signal analysis and testing.

Detailed and Complete Alternative Models

1. GS1536-CFUE3: Similar specifications and characteristics as GS1535-CFUE3.
2. GS1537-CFUE3: Higher maximum drain current capacity than GS1535-CFUE3.
3. GS1538-CFUE3: Lower operating temperature range but higher power dissipation capability compared to GS1535-CFUE3.

(Note: The above alternative models are fictional and provided for illustrative purposes only.)

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