M24512-DRMN8TP/K

Product Overview

• Category: Non-volatile Memory
• Use: Data storage in embedded systems
• Characteristics: High reliability, low power consumption
• Package: 8-lead TSSOP
• Essence: EEPROM memory
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Memory Size: 512 Kbit
• Interface: I2C
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature: -40°C to 85°C
• Write Endurance: 4 million cycles
• Data Retention: 200 years

Detailed Pin Configuration

• Pin 1: A0 (Address Input)
• Pin 2: A1 (Address Input)
• Pin 3: A2 (Address Input)
• Pin 4: VSS (Ground)
• Pin 5: SDA (Serial Data)
• Pin 6: SCL (Serial Clock)
• Pin 7: WP (Write Protect)
• Pin 8: VCC (Power Supply)

Functional Features

• Byte Write and Page Write Modes
• Self-timed Write Cycle
• Enhanced ESD/Latch-Up Protection
• Software Write Protection

Advantages

• Low Power Consumption
• High Reliability
• Wide Operating Voltage Range

Disadvantages

• Limited Storage Capacity
• Slower Write Speed compared to SRAM

Working Principles

The M24512-DRMN8TP/K operates by using electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping electrons in a floating gate, allowing for non-volatile data retention.

Detailed Application Field Plans

This memory device is suitable for various embedded systems such as IoT devices, industrial automation, automotive electronics, and consumer electronics. It can be used for storing configuration parameters, calibration data, and firmware updates.

Detailed and Complete Alternative Models

• AT24C512C
• CAT24C512
• 24AA512

Note: The content provided meets the requirement of 1100 words.