The M48T08Y-10MH1F belongs to the category of non-volatile static random access memory (NVSRAM).
This product is commonly used in applications that require reliable data storage even when power is lost or turned off. It combines the benefits of both RAM and non-volatile memory, making it ideal for applications where data integrity is crucial.
The M48T08Y-10MH1F is available in a compact 32-pin small outline integrated circuit (SOIC) package.
The essence of the M48T08Y-10MH1F lies in its ability to combine the advantages of SRAM and non-volatile memory, providing reliable data storage and high-speed access.
This product is typically packaged in reels, with each reel containing a specific quantity of M48T08Y-10MH1F chips. The exact quantity may vary depending on the manufacturer's specifications.
The M48T08Y-10MH1F has a total of 32 pins. Here is the detailed pin configuration:
The M48T08Y-10MH1F combines the principles of SRAM and non-volatile memory. It utilizes a small onboard battery to provide power when the main power source is disconnected. This allows the device to retain data even during power loss. The integrated real-time clock ensures accurate timekeeping.
The M48T08Y-10MH1F finds applications in various fields, including: 1. Industrial automation systems 2. Medical equipment 3. Automotive electronics 4. Communication devices 5. Data loggers 6. Gaming consoles 7. Security systems 8. Embedded systems
These alternative models offer similar functionality and characteristics to the M48T08Y-10MH1F, catering to different application requirements.
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Sure! Here are 10 common questions and answers related to the application of M48T08Y-10MH1F in technical solutions:
Q1: What is the M48T08Y-10MH1F? A1: The M48T08Y-10MH1F is a non-volatile static RAM (NVSRAM) with a capacity of 8,192 words by 8 bits. It combines the features of a static RAM with a non-volatile electrically erasable programmable read-only memory (EEPROM).
Q2: What is the operating voltage range for the M48T08Y-10MH1F? A2: The M48T08Y-10MH1F operates within a voltage range of 4.5V to 5.5V.
Q3: What is the maximum data retention period of the M48T08Y-10MH1F? A3: The M48T08Y-10MH1F has a minimum data retention period of 10 years.
Q4: Can the M48T08Y-10MH1F be used as a replacement for standard SRAMs? A4: Yes, the M48T08Y-10MH1F can be used as a drop-in replacement for standard SRAMs, providing non-volatile storage capability.
Q5: How is data written to the M48T08Y-10MH1F? A5: Data can be written to the M48T08Y-10MH1F using a simple write cycle that involves providing the chip enable signal, address, and data inputs.
Q6: Is the M48T08Y-10MH1F compatible with standard microcontrollers and processors? A6: Yes, the M48T08Y-10MH1F is compatible with standard microcontrollers and processors that support a parallel interface.
Q7: Can the M48T08Y-10MH1F be used in battery-backed applications? A7: Yes, the M48T08Y-10MH1F has a built-in lithium energy source that allows it to operate in battery-backed applications.
Q8: What is the access time of the M48T08Y-10MH1F? A8: The M48T08Y-10MH1F has an access time of 100ns, making it suitable for many real-time applications.
Q9: Does the M48T08Y-10MH1F support hardware write protection? A9: Yes, the M48T08Y-10MH1F supports hardware write protection through the use of a write protect pin.
Q10: Can the M48T08Y-10MH1F be used in industrial temperature environments? A10: Yes, the M48T08Y-10MH1F is designed to operate within an industrial temperature range of -40°C to +85°C.
Please note that these answers are based on general information about the M48T08Y-10MH1F and may vary depending on specific application requirements.