M48T58Y-70MH1E

Product Overview

Category

The M48T58Y-70MH1E belongs to the category of non-volatile static random access memory (NVSRAM).

Use

This product is commonly used as a backup memory device in various electronic systems, where data retention is crucial during power loss or system shutdown.

Characteristics

• Non-volatile: The M48T58Y-70MH1E retains data even when power is disconnected.
• Static RAM: It provides fast read and write access times.
• High density: The device offers a large storage capacity for data backup.
• Low power consumption: It operates efficiently, consuming minimal power during normal operation.

Package

The M48T58Y-70MH1E is available in a compact 28-pin small outline integrated circuit (SOIC) package.

Essence

The essence of the M48T58Y-70MH1E lies in its ability to combine the benefits of non-volatile memory with the speed and ease of use of static RAM.

Packaging/Quantity

This product is typically packaged in reels containing a quantity of 250 units per reel.

Specifications

• Supply voltage: 4.5V to 5.5V
• Operating temperature range: -40°C to +85°C
• Data retention: Minimum 10 years
• Access time: 70ns
• Memory organization: 64K x 8 bits
• Write protect pin: Yes
• Automatic power-fail chip deselect: Yes

Detailed Pin Configuration

The M48T58Y-70MH1E has the following pin configuration:

1. VCC - Power supply
2. A0-A15 - Address inputs
3. DQ0-DQ7 - Data input/output
4. CE - Chip enable
5. OE - Output enable
6. WE - Write enable
7. RESET - Reset input
8. VBAT - Battery backup supply
9. WP - Write protect
10. NC - No connection
11. GND - Ground

Functional Features

• Non-volatile data storage: The M48T58Y-70MH1E retains data even when power is lost, ensuring data integrity.
• Fast access times: It provides quick read and write operations, making it suitable for real-time applications.
• Battery backup: The device has a battery backup supply (VBAT) to maintain data during power interruptions.
• Write protection: The write protect (WP) pin allows users to protect the stored data from accidental modifications.

Advantages and Disadvantages

Advantages

• Reliable data retention during power loss
• High-speed access times
• Low power consumption
• Compact package size

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to traditional RAM

Working Principles

The M48T58Y-70MH1E combines a static RAM array with a non-volatile electrically erasable programmable read-only memory (EEPROM). When power is applied, the device operates like a standard SRAM, allowing fast read and write operations. However, during power loss, an internal lithium battery powers the EEPROM portion, ensuring data retention.

Detailed Application Field Plans

The M48T58Y-70MH1E finds application in various fields, including: 1. Industrial control systems 2. Medical equipment 3. Automotive electronics 4. Communication devices 5. Power grid infrastructure

In industrial control systems, this NVSRAM serves as a reliable backup memory for critical process data. In medical equipment, it ensures the preservation of patient information during power outages. Automotive electronics benefit from its ability to retain vital data in case of battery disconnection. Communication devices rely on the M48T58Y-70MH1E to store configuration settings and maintain network connectivity. Power grid infrastructure utilizes this NVSRAM for fault logging and power quality monitoring.

Detailed and Complete Alternative Models

1. M48T08Y-70PC1: 8K x 8-bit NVSRAM with similar characteristics and package.
2. M48T18Y-70MH6: 16K x 8-bit NVSRAM with extended temperature range.
3. M48T128Y-85PM1: 128K x 8-bit NVSRAM with higher storage capacity.

These alternative models offer different memory capacities and operating specifications, allowing users to choose the most suitable option for their specific requirements.

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