NAND01GW3B2AN6E

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Non-volatile memory storage
• Characteristics:
  • High-density storage
  • Fast read and write speeds
  • Low power consumption
• Package: Surface Mount Technology (SMT)
• Essence: NAND flash memory chip
• Packaging/Quantity: Available in reels of 1000 units

Specifications

• Storage Capacity: 1 Gigabit (1 Gb)
• Organization: 128 Megabytes (128 MB) x 8 bits
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The NAND01GW3B2AN6E has a total of 8 pins arranged as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground | | 3 | CS | Chip select | | 4 | SCK | Serial clock input | | 5 | SI | Serial data input | | 6 | SO | Serial data output | | 7 | WP | Write protect | | 8 | HOLD | Hold input |

Functional Features

• High-speed data transfer rates
• Block erase and page program operations
• Error correction code (ECC) for data integrity
• Internal voltage generation for reliable operation
• Hardware write protection

Advantages and Disadvantages

Advantages

• High storage density allows for more data to be stored in a compact form factor.
• Fast read and write speeds enable quick data access and transfer.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Relatively higher cost per unit of storage compared to alternative options.

Working Principles

The NAND01GW3B2AN6E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels applied to the floating gate. The data can be read, written, or erased by applying specific electrical signals through the pins of the IC.

Detailed Application Field Plans

The NAND01GW3B2AN6E is commonly used in various electronic devices that require non-volatile memory storage, such as: - Solid-state drives (SSDs) - USB flash drives - Memory cards (SD, microSD) - Embedded systems - Consumer electronics (smartphones, tablets, digital cameras)

Detailed and Complete Alternative Models

• NAND02GW3B2BN6E: 2 Gigabit (2 Gb) capacity variant
• NAND04GW3B2CN6E: 4 Gigabit (4 Gb) capacity variant
• NAND08GW3B2DN6E: 8 Gigabit (8 Gb) capacity variant

These alternative models offer increased storage capacities while maintaining similar characteristics and pin configurations.

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