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STGW28IH125DF
Product Overview
Category
The STGW28IH125DF belongs to the category of Insulated Gate Bipolar Transistors (IGBTs).
Use
It is commonly used as a power semiconductor device in various electronic applications.
Characteristics
- High voltage capability
- Low saturation voltage
- Fast switching speed
- Robustness and reliability
Package
The STGW28IH125DF is typically available in a TO-247 package.
Essence
This IGBT is essential for controlling high power levels in electronic circuits.
Packaging/Quantity
It is usually packaged individually and sold in quantities suitable for industrial applications.
Specifications
- Voltage Rating: 1200V
- Current Rating: 40A
- Maximum Operating Temperature: 150°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
Detailed Pin Configuration
The STGW28IH125DF has a standard TO-247 pin configuration with three pins: collector, gate, and emitter.
Functional Features
- High voltage capability allows for use in high-power applications.
- Low saturation voltage minimizes power loss during operation.
- Fast switching speed enables efficient control of power flow.
Advantages
- Suitable for high voltage applications
- Low power dissipation
- Reliable and robust construction
Disadvantages
- May require careful thermal management due to high power handling capabilities
- Higher cost compared to standard transistors
Working Principles
The STGW28IH125DF operates based on the principles of insulated gate bipolar transistor technology, which involves the controlled flow of current between the collector and emitter terminals through the application of a voltage to the gate terminal.
Detailed Application Field Plans
The STGW28IH125DF is widely used in various applications such as: - Motor drives - Renewable energy systems - Power supplies - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the STGW28IH125DF include: - IRG4PH50UD (International Rectifier) - FGA25N120ANTD (Fairchild Semiconductor) - CM400HA-24H (Mitsubishi Electric)
In conclusion, the STGW28IH125DF is a high-voltage IGBT with fast switching characteristics, making it suitable for a wide range of power control applications. Its robust design and reliable performance make it a popular choice in industries requiring high-power electronics.
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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng STGW28IH125DF trong giải pháp kỹ thuật
What is STGW28IH125DF?
- STGW28IH125DF is a 1250V, 28A IGBT (Insulated Gate Bipolar Transistor) designed for high power switching applications.
What are the key features of STGW28IH125DF?
- The key features include low saturation voltage, fast switching speed, and high ruggedness.
What are the typical applications of STGW28IH125DF?
- Typical applications include motor control, solar inverters, welding equipment, and industrial drives.
What is the maximum operating temperature of STGW28IH125DF?
- The maximum operating temperature is typically 175°C.
What is the recommended gate-emitter voltage for STGW28IH125DF?
- The recommended gate-emitter voltage is typically ±20V.
Does STGW28IH125DF require an external freewheeling diode?
- Yes, an external freewheeling diode is required for inductive load applications.
What is the typical thermal resistance junction to case of STGW28IH125DF?
- The typical thermal resistance junction to case is 0.35°C/W.
Is STGW28IH125DF suitable for parallel operation?
- Yes, it is suitable for parallel operation due to its low VCE(sat) and positive temperature coefficient.
What are the recommended mounting torque and pressure for STGW28IH125DF?
- The recommended mounting torque is typically 1.5 Nm and the pressure is typically 10 N.
Does STGW28IH125DF have built-in protection features?
- Yes, it has built-in short-circuit and over-temperature protection features for enhanced reliability.