VNV14N04

Product Overview

Category: Integrated Circuit (IC)

Use: VNV14N04 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications.

Characteristics: - High voltage capability - Low on-resistance - Fast switching speed - Enhanced thermal performance

Package: VNV14N04 is available in a TO-252 (DPAK) package, which provides excellent thermal dissipation.

Essence: This power MOSFET is an essential component in electronic devices that require efficient power management and control.

Packaging/Quantity: VNV14N04 is typically sold in reels containing 2,500 units per reel.

Specifications

• Drain-Source Voltage (VDS): 40V
• Continuous Drain Current (ID): 14A
• Power Dissipation (PD): 2.5W
• Gate-Source Voltage (VGS): ±20V
• Drain-Source On-Resistance (RDS(ON)): 0.025Ω (max)
• Input Capacitance (Ciss): 1,100pF (typ)
• Output Capacitance (Coss): 200pF (typ)
• Reverse Transfer Capacitance (Crss): 150pF (typ)
• Operating Temperature Range: -55°C to +175°C

Detailed Pin Configuration

The VNV14N04 power MOSFET has three pins:

1. Drain (D): Connected to the positive terminal of the load or power supply.
2. Source (S): Connected to the negative terminal of the load or power supply.
3. Gate (G): Controls the conductivity between the Drain and Source terminals.

Functional Features

• High voltage capability allows for use in a wide range of applications.
• Low on-resistance minimizes power losses and improves efficiency.
• Fast switching speed enables rapid response in switching circuits.
• Enhanced thermal performance ensures reliable operation under high-power conditions.

Advantages and Disadvantages

Advantages: - High voltage capability - Low on-resistance - Fast switching speed - Excellent thermal performance

Disadvantages: - Limited availability in certain markets - Relatively higher cost compared to alternative models

Working Principles

VNV14N04 operates based on the principles of a MOSFET. When a positive voltage is applied to the Gate terminal, it creates an electric field that allows current to flow between the Drain and Source terminals. By controlling the Gate voltage, the conductivity of the MOSFET can be regulated, enabling efficient power management.

Detailed Application Field Plans

VNV14N04 finds applications in various electronic systems, including but not limited to: - Power supplies - Motor control circuits - LED lighting - Switching regulators - Audio amplifiers

Detailed and Complete Alternative Models

1. VNV14N06: Similar to VNV14N04 but with a higher Drain-Source Voltage (60V).
2. VNV14P04: Complementary P-channel MOSFET to VNV14N04 for bidirectional power control.
3. VNV12N04: Lower voltage variant of VNV14N04 with a Drain-Source Voltage of 30V.

These alternative models provide flexibility in selecting the appropriate MOSFET based on specific application requirements.

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