1SMA4757HR3G

Product Overview

The 1SMA4757HR3G belongs to the category of semiconductor devices and is specifically designed for use in voltage clamping applications. This product is characterized by its high reliability, low leakage current, and fast response time. It is typically packaged in a surface mount DO-214AC (SMA) package and is available in tape and reel packaging with a quantity of 3000 units per reel.

Specifications

• Voltage Rating: 36V
• Power Dissipation: 5.0W
• Operating Temperature Range: -55°C to +150°C
• Breakdown Voltage: 40.2V to 44.7V
• Peak Pulse Power: 5000W

Detailed Pin Configuration

The 1SMA4757HR3G features a standard SMA package with two pins. Pin 1 is the anode, while pin 2 is the cathode.

Functional Features

This product provides effective overvoltage protection by clamping the voltage to a safe level during transient events. It offers fast response times to protect sensitive electronic components from damage.

Advantages and Disadvantages

Advantages

• High reliability
• Low leakage current
• Fast response time
• Wide operating temperature range

Disadvantages

• Limited breakdown voltage options
• Relatively high power dissipation

Working Principles

The 1SMA4757HR3G operates based on the principle of avalanche breakdown, where it rapidly conducts excess current away from the protected circuit when the voltage exceeds the clamping level.

Detailed Application Field Plans

This product is commonly used in various electronic systems such as power supplies, communication equipment, automotive electronics, and industrial control systems to protect against voltage transients and surges.

Detailed and Complete Alternative Models

• 1SMA4744HR3G
• 1SMA4766HR3G
• 1SMA4788HR3G

In conclusion, the 1SMA4757HR3G is a reliable and efficient voltage clamping device suitable for a wide range of applications, despite its limited breakdown voltage options and relatively high power dissipation. Its fast response time and low leakage current make it a valuable component in protecting sensitive electronic circuits from transient events.