LM5109BSDX/NOPB

Product Overview

• Category: Integrated Circuit (IC)
• Use: Power Management
• Characteristics: High Voltage Gate Driver
• Package: LLP-8 (Leadless Package)
• Essence: Efficiently drives high-side and low-side N-channel MOSFETs in half-bridge or full-bridge configurations
• Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

• Supply Voltage Range: 4.5V to 15V
• Output Current: ±2A peak
• Switching Frequency: Up to 1MHz
• Operating Temperature Range: -40°C to +125°C
• Protection Features: Overcurrent, Undervoltage Lockout, Thermal Shutdown

Pin Configuration

The LM5109BSDX/NOPB has the following pin configuration:

1. VDD: Supply voltage for the IC
2. HO: High-side gate driver output
3. LO: Low-side gate driver output
4. VSS: Ground reference for the IC
5. HB: Half-bridge node connection
6. HS: High-side MOSFET source connection
7. LS: Low-side MOSFET source connection
8. NC: No connection

Functional Features

• Provides high voltage level shifting for driving N-channel MOSFETs
• Supports both half-bridge and full-bridge configurations
• Integrated bootstrap diode for high-side gate drive
• Adaptive shoot-through protection for preventing cross-conduction
• Adjustable dead-time control for optimizing switching performance
• Fast propagation delay for precise timing control

Advantages and Disadvantages

Advantages: - Efficient and reliable high-side and low-side MOSFET driving - Wide supply voltage range allows flexibility in various applications - Comprehensive protection features ensure safe operation - Compact and leadless package for space-constrained designs

Disadvantages: - Limited output current may not be suitable for high-power applications - Requires external components for bootstrap operation

Working Principles

The LM5109BSDX/NOPB is a high voltage gate driver IC designed to efficiently drive N-channel MOSFETs in power management applications. It utilizes level shifting techniques to provide proper gate drive voltages for both the high-side and low-side MOSFETs.

The integrated bootstrap diode simplifies the high-side gate drive circuitry, while the adaptive shoot-through protection prevents any potential cross-conduction issues. The adjustable dead-time control allows optimization of switching performance by preventing simultaneous conduction of high-side and low-side MOSFETs.

Application Field Plans

The LM5109BSDX/NOPB is commonly used in various power management applications, including:

1. Switching Power Supplies
2. Motor Drives
3. Solar Inverters
4. LED Lighting
5. Battery Charging Systems

Alternative Models

Here are some alternative models that can be considered as replacements for the LM5109BSDX/NOPB:

1. LM5110: High Voltage Half-Bridge Gate Driver
2. IRS2186: High and Low Side Driver IC
3. MAX15062: High-Speed MOSFET Driver
4. FAN7388: High and Low Side Gate Driver
5. UCC27211: 120V Half-Bridge Gate Driver

These alternative models offer similar functionality and can be used depending on specific application requirements.

In conclusion, the LM5109BSDX/NOPB is a high voltage gate driver IC with efficient driving capabilities for N-channel MOSFETs. Its compact package, comprehensive protection features, and wide supply voltage range make it suitable for various power management applications.