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AZ23C10-G3-18

AZ23C10-G3-18

Product Overview

Category: Diode
Use: Rectification and signal processing
Characteristics: Small form factor, low forward voltage drop, high switching speed
Package: SOD-323
Essence: High-performance diode for various electronic applications
Packaging/Quantity: Available in reels of 3000 units

Specifications

  • Type: Schottky Barrier Diode
  • Voltage Rating: 30V
  • Current Rating: 200mA
  • Forward Voltage Drop: 0.38V at 10mA
  • Reverse Leakage Current: 1μA at 25V
  • Operating Temperature Range: -65°C to +150°C

Detailed Pin Configuration

The AZ23C10-G3-18 is a two-pin device with anode and cathode terminals.

Functional Features

  • Low forward voltage drop enables efficient power conversion.
  • High switching speed allows for rapid signal processing.
  • Schottky barrier design minimizes reverse recovery time.

Advantages and Disadvantages

Advantages: 1. Efficient power conversion due to low forward voltage drop. 2. Fast switching speed for rapid signal processing. 3. Minimal reverse recovery time.

Disadvantages: 1. Limited voltage and current ratings compared to some other diode types. 2. Sensitivity to temperature variations.

Working Principles

The AZ23C10-G3-18 operates based on the Schottky barrier principle, where a metal-semiconductor junction is formed to allow for fast switching and low forward voltage drop during rectification and signal processing.

Detailed Application Field Plans

This diode is suitable for various applications including: - Power supply circuits - Signal demodulation - Voltage clamping - Reverse polarity protection

Detailed and Complete Alternative Models

  1. 1N5819: Higher voltage and current ratings
  2. BAT54S: Dual diode configuration
  3. SS14: Lower forward voltage drop

In conclusion, the AZ23C10-G3-18 is a versatile diode offering efficient rectification and signal processing capabilities, making it suitable for a wide range of electronic applications.

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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng AZ23C10-G3-18 trong giải pháp kỹ thuật

  1. What is the maximum forward voltage of AZ23C10-G3-18?

    • The maximum forward voltage of AZ23C10-G3-18 is typically 0.715V at a forward current of 10mA.
  2. What is the reverse breakdown voltage of AZ23C10-G3-18?

    • The reverse breakdown voltage of AZ23C10-G3-18 is typically 10V.
  3. What is the power dissipation of AZ23C10-G3-18?

    • The power dissipation of AZ23C10-G3-18 is typically 225mW.
  4. What is the maximum junction temperature of AZ23C10-G3-18?

    • The maximum junction temperature of AZ23C10-G3-18 is 150°C.
  5. What are the typical applications for AZ23C10-G3-18?

    • AZ23C10-G3-18 is commonly used in voltage clamping, signal switching, and high-speed logic circuits.
  6. What is the storage temperature range for AZ23C10-G3-18?

    • The storage temperature range for AZ23C10-G3-18 is -55°C to 150°C.
  7. What is the package type of AZ23C10-G3-18?

    • AZ23C10-G3-18 is available in a SOT-23 package.
  8. What is the maximum reverse leakage current of AZ23C10-G3-18?

    • The maximum reverse leakage current of AZ23C10-G3-18 is typically 0.1µA at a reverse voltage of 10V.
  9. Can AZ23C10-G3-18 be used in high-frequency applications?

    • Yes, AZ23C10-G3-18 is suitable for high-frequency applications due to its fast switching speed.
  10. Is AZ23C10-G3-18 RoHS compliant?

    • Yes, AZ23C10-G3-18 is RoHS compliant, making it suitable for use in environmentally sensitive applications.