SI1988DH-T1-GE3

Product Overview

Category

The SI1988DH-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

• High power handling capability
• Low on-state resistance
• Fast switching speed
• Enhanced thermal performance

Package

The SI1988DH-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

The essence of this product lies in its ability to efficiently manage power in various electronic circuits while minimizing power losses.

Packaging/Quantity

It is usually supplied in reels with a quantity of 3000 units per reel.

Specifications

• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 42A
• RDS(ON) (Max) @ VGS = 10V: 2.5mΩ
• Gate-Source Voltage (VGS): ±20V
• Total Power Dissipation (PD): 3.1W

Detailed Pin Configuration

The SI1988DH-T1-GE3 features the following pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S) 4. - 5. - 6. Source (S) 7. Drain (D) 8. Gate (G)

Functional Features

• Low gate charge
• Improved ruggedness
• Enhanced avalanche energy capability
• RoHS compliant

Advantages and Disadvantages

Advantages

• High power handling capacity
• Low on-state resistance reduces conduction losses
• Fast switching speed minimizes switching losses
• RoHS compliance ensures environmental friendliness

Disadvantages

• Sensitive to static electricity
• May require additional ESD protection in certain applications

Working Principles

The SI1988DH-T1-GE3 operates based on the principles of field-effect transistors, where the control of current flow between the drain and source terminals is achieved through the application of a voltage to the gate terminal.

Detailed Application Field Plans

This power MOSFET is widely utilized in various applications including: - Switching power supplies - DC-DC converters - Motor control systems - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SI1988DH-T1-GE3 include: - SI2301DS-T1-GE3 - SI2333DDS-T1-GE3 - SI2365DS-T1-GE3 - SI2395DS-T1-GE3

In conclusion, the SI1988DH-T1-GE3 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it a versatile choice for engineers and designers seeking efficient power control solutions.

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