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SI2301BDS-T1-E3
Product Overview
Category
The SI2301BDS-T1-E3 belongs to the category of power MOSFETs.
Use
It is commonly used as a switching device in various electronic circuits and applications.
Characteristics
- Low on-resistance
- High-speed switching
- Low gate drive voltage
- Small package size
Package
The SI2301BDS-T1-E3 is typically available in a small SOT-23 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices.
Packaging/Quantity
It is usually supplied in tape and reel packaging with varying quantities depending on the supplier.
Specifications
- Drain-Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 2.3A
- On-Resistance (Rds On): 0.08 Ohms
- Gate-Source Voltage (Vgs): ±8V
- Total Power Dissipation (Pd): 1.25W
Detailed Pin Configuration
The SI2301BDS-T1-E3 has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)
Functional Features
- Fast switching speed
- Low power consumption
- Suitable for low-voltage applications
Advantages
- Compact size
- Low on-resistance
- Efficient power management
Disadvantages
- Limited maximum voltage and current ratings
- Sensitivity to static discharge
Working Principles
The SI2301BDS-T1-E3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The SI2301BDS-T1-E3 is widely used in: - Battery protection circuits - Portable electronics - DC-DC converters - Load switches
Detailed and Complete Alternative Models
Some alternative models to the SI2301BDS-T1-E3 include: - SI2302DS-T1-GE3 - SI2304DS-T1-GE3 - SI2305DS-T1-GE3
In conclusion, the SI2301BDS-T1-E3 power MOSFET offers compact size, low on-resistance, and efficient power management, making it suitable for various low-voltage electronic applications.
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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng SI2301BDS-T1-E3 trong giải pháp kỹ thuật
What is the maximum drain-source voltage of SI2301BDS-T1-E3?
- The maximum drain-source voltage of SI2301BDS-T1-E3 is 20V.
What is the continuous drain current of SI2301BDS-T1-E3?
- The continuous drain current of SI2301BDS-T1-E3 is 2.7A.
What is the on-resistance of SI2301BDS-T1-E3?
- The on-resistance of SI2301BDS-T1-E3 is typically 0.09 ohms.
What is the gate threshold voltage of SI2301BDS-T1-E3?
- The gate threshold voltage of SI2301BDS-T1-E3 is typically 1.5V.
Can SI2301BDS-T1-E3 be used in low-power applications?
- Yes, SI2301BDS-T1-E3 is suitable for low-power applications due to its low on-resistance and low gate threshold voltage.
Is SI2301BDS-T1-E3 suitable for battery-powered devices?
- Yes, SI2301BDS-T1-E3 is a good choice for battery-powered devices due to its low on-resistance and low power consumption.
What are the typical applications of SI2301BDS-T1-E3?
- Typical applications of SI2301BDS-T1-E3 include load switching, power management, and battery protection in portable electronics.
Does SI2301BDS-T1-E3 require a heat sink for thermal management?
- In most cases, SI2301BDS-T1-E3 does not require a heat sink due to its low on-resistance and efficient thermal performance.
What is the operating temperature range of SI2301BDS-T1-E3?
- The operating temperature range of SI2301BDS-T1-E3 is typically -55°C to 150°C.
Is SI2301BDS-T1-E3 RoHS compliant?
- Yes, SI2301BDS-T1-E3 is RoHS compliant, making it suitable for environmentally friendly designs.