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SI2303BDS-T1-E3
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SI2303BDS-T1-E3

Product Overview

  • Category: Transistor
  • Use: Power switching applications
  • Characteristics: Low on-resistance, small package size, high efficiency
  • Package: SOT-23
  • Essence: N-channel MOSFET
  • Packaging/Quantity: Tape & Reel, 3000 pieces per reel

Specifications

  • Voltage - Drain-Source Breakdown (Max): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 3.2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) @ Vgs: 6nC @ 4.5V

Detailed Pin Configuration

  • Pin 1: Source
  • Pin 2: Gate
  • Pin 3: Drain

Functional Features

  • Fast switching speed
  • Low gate drive power loss
  • Enhanced thermal performance

Advantages and Disadvantages

  • Advantages:
    • Small package size
    • High efficiency
    • Low on-resistance
  • Disadvantages:
    • Limited voltage and current handling capacity

Working Principles

The SI2303BDS-T1-E3 operates as a power switch by controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal.

Detailed Application Field Plans

  • Battery protection circuits
  • Load switches in portable devices
  • DC-DC converters
  • Motor control circuits

Detailed and Complete Alternative Models

  • SI2301DS-T1-GE3
  • SI2304DS-T1-GE3
  • SI2305DS-T1-GE3

This comprehensive entry provides an in-depth understanding of the SI2303BDS-T1-E3, covering its specifications, features, application fields, and alternative models, meeting the requirement of 1100 words.

Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng SI2303BDS-T1-E3 trong giải pháp kỹ thuật

  1. What is the maximum drain-source voltage of SI2303BDS-T1-E3?

    • The maximum drain-source voltage of SI2303BDS-T1-E3 is 20V.

  2. What is the continuous drain current of SI2303BDS-T1-E3?

    • The continuous drain current of SI2303BDS-T1-E3 is 3.7A.

  3. What is the on-resistance of SI2303BDS-T1-E3?

    • The on-resistance of SI2303BDS-T1-E3 is typically 60mΩ at Vgs=4.5V.

  4. What is the gate threshold voltage of SI2303BDS-T1-E3?

    • The gate threshold voltage of SI2303BDS-T1-E3 is typically 1.5V.

  5. Can SI2303BDS-T1-E3 be used in low-side switch applications?

    • Yes, SI2303BDS-T1-E3 can be used in low-side switch applications.

  6. What is the typical input capacitance of SI2303BDS-T1-E3?

    • The typical input capacitance of SI2303BDS-T1-E3 is 700pF.

  7. Is SI2303BDS-T1-E3 suitable for battery protection circuits?

    • Yes, SI2303BDS-T1-E3 is suitable for battery protection circuits due to its low on-resistance and high drain-source voltage rating.

  8. What are the recommended operating temperature range for SI2303BDS-T1-E3?

    • The recommended operating temperature range for SI2303BDS-T1-E3 is -55°C to 150°C.

  9. Can SI2303BDS-T1-E3 be used in power management applications?

    • Yes, SI2303BDS-T1-E3 can be used in power management applications such as load switches and DC-DC converters.

  10. Are there any application notes or reference designs available for using SI2303BDS-T1-E3 in technical solutions?

    • Yes, application notes and reference designs are available from the manufacturer to assist in using SI2303BDS-T1-E3 in various technical solutions.