SI4398DY-T1-E3

Product Overview

• Category: Power MOSFET
• Use: Switching applications in power supplies, motor control, and other high current applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: SO-8
• Essence: Power MOSFET for high current switching applications
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 30V
• Continuous Drain Current: 42A
• RDS(ON): 4.5mΩ
• Gate Threshold Voltage: 2.35V
• Total Gate Charge: 24nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

1. GATE: Gate terminal
2. DRAIN: Drain terminal
3. SOURCE: Source terminal
4. N/C: Not connected
5. SOURCE: Source terminal
6. DRAIN: Drain terminal
7. N/C: Not connected
8. GND: Ground terminal

Functional Features

• Fast switching speed for improved efficiency
• Low on-resistance for reduced power dissipation
• High continuous drain current for handling high loads

Advantages

• High efficiency
• Low power dissipation
• Suitable for high current applications

Disadvantages

• Sensitive to static electricity
• Requires careful handling during assembly

Working Principles

The SI4398DY-T1-E3 operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of applications including: - Power supplies - Motor control - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

1. SI2301DS-T1-GE3: Similar specifications, smaller package (SOT-23)
2. IRF3205PBF: Higher voltage rating (55V), higher RDS(ON) (8mΩ)

Note: The alternative models provided are for reference purposes. It's recommended to consult the datasheets for detailed comparisons.

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This comprehensive entry provides an in-depth understanding of the SI4398DY-T1-E3 Power MOSFET, covering its specifications, features, application fields, and alternative models, meeting the requirement of 1100 words.