SI4484EY-T1-E3

Product Overview

• Category: Power MOSFET
• Use: Switching applications in power supplies, motor control, and other electronic devices
• Characteristics: Low on-resistance, high current capability, low gate charge
• Package: SO-8
• Essence: N-channel MOSFET
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 40V
• Continuous Drain Current: 15A
• RDS(ON): 6.5mΩ (max) at VGS = 10V
• Gate Charge: 16nC (typical)

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Drain
• Pin 3: Source
• Pin 4: N/C
• Pin 5: Source
• Pin 6: Drain
• Pin 7: Source
• Pin 8: Gate

Functional Features

• Fast switching speed
• Low gate drive power loss
• Enhanced thermal performance

Advantages

• High efficiency
• Reduced power dissipation
• Improved system reliability

Disadvantages

• Sensitivity to voltage spikes
• Potential for thermal runaway if not properly managed

Working Principles

The SI4484EY-T1-E3 operates as a switch controlled by the voltage applied to its gate terminal. When the gate-source voltage exceeds the threshold, the MOSFET turns on, allowing current to flow from the drain to the source.

Detailed Application Field Plans

• Power supplies
• Motor control circuits
• DC-DC converters
• Battery management systems

Detailed and Complete Alternative Models

1. SI2301DS-T1-GE3

   • Category: Power MOSFET
   • Use: General-purpose switching
   • Characteristics: Low threshold voltage, small package
   • Package: SOT-23
   • Voltage Rating: 20V
   • Continuous Drain Current: 2.3A
   • RDS(ON): 150mΩ (max) at VGS = 4.5V

2. SI7850DP-T1-GE3

   • Category: Power MOSFET
   • Use: Load switching in portable devices
   • Characteristics: Low on-resistance, small package
   • Package: PowerPAK SC-70
   • Voltage Rating: 30V
   • Continuous Drain Current: 3.7A
   • RDS(ON): 60mΩ (max) at VGS = 4.5V

In conclusion, the SI4484EY-T1-E3 is a high-performance N-channel MOSFET suitable for various switching applications, offering advantages in efficiency and reliability. However, careful consideration of voltage spikes and thermal management is essential for optimal performance.

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