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SI5401DC-T1-E3

SI5401DC-T1-E3

Product Overview

Category

SI5401DC-T1-E3 belongs to the category of integrated circuits (ICs).

Use

It is used as a dual N-channel MOSFET switch.

Characteristics

  • Low on-resistance
  • Fast switching speed
  • Low gate drive voltage
  • Small package size

Package

SI5401DC-T1-E3 is available in a small outline package (SOP-8).

Essence

The essence of SI5401DC-T1-E3 lies in its ability to efficiently switch high currents with minimal power loss.

Packaging/Quantity

It is typically packaged in reels and available in quantities suitable for production runs.

Specifications

  • Drain-to-Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4.3A
  • Rds(on) (Max) @ Vgs: 25 mOhm @ 10V
  • Input Capacitance (Ciss): 1100pF
  • Power Dissipation (Pd): 2.5W

Detailed Pin Configuration

SI5401DC-T1-E3 features the following pin configuration: 1. Gate 1 2. Source 1 3. Drain 1 4. Source 2 5. Gate 2 6. Drain 2 7. NC (Not Connected) 8. GND

Functional Features

  • Dual N-channel MOSFETs
  • Low on-resistance for minimal power loss
  • Suitable for high current switching applications

Advantages and Disadvantages

Advantages

  • Fast switching speed
  • Low gate drive voltage requirement
  • Small package size for space-constrained designs

Disadvantages

  • Limited maximum drain-to-source voltage
  • Relatively low continuous drain current compared to some alternatives

Working Principles

SI5401DC-T1-E3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel between the source and drain terminals.

Detailed Application Field Plans

SI5401DC-T1-E3 is commonly used in various electronic devices and systems, including: - Power management circuits - Motor control applications - LED lighting drivers - Battery protection circuits

Detailed and Complete Alternative Models

Some alternative models to SI5401DC-T1-E3 include: - SI2301DS-T1-GE3 - SI2333DDS-T1-GE3 - SI2365DS-T1-GE3 - SI2391DS-T1-GE3

This completes the entry for SI5401DC-T1-E3, providing comprehensive information about its product details, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng SI5401DC-T1-E3 trong giải pháp kỹ thuật

  1. What is the maximum voltage rating for SI5401DC-T1-E3?

    • The maximum voltage rating for SI5401DC-T1-E3 is 20V.
  2. What is the typical on-state resistance of SI5401DC-T1-E3?

    • The typical on-state resistance of SI5401DC-T1-E3 is 25mΩ.
  3. Can SI5401DC-T1-E3 be used in automotive applications?

    • Yes, SI5401DC-T1-E3 is suitable for automotive applications.
  4. What is the maximum continuous drain current for SI5401DC-T1-E3?

    • The maximum continuous drain current for SI5401DC-T1-E3 is 6.3A.
  5. Does SI5401DC-T1-E3 have over-temperature protection?

    • Yes, SI5401DC-T1-E3 features over-temperature protection.
  6. Is SI5401DC-T1-E3 RoHS compliant?

    • Yes, SI5401DC-T1-E3 is RoHS compliant.
  7. What is the operating temperature range for SI5401DC-T1-E3?

    • The operating temperature range for SI5401DC-T1-E3 is -55°C to 150°C.
  8. Can SI5401DC-T1-E3 be used in power management applications?

    • Yes, SI5401DC-T1-E3 is suitable for power management applications.
  9. What is the gate threshold voltage for SI5401DC-T1-E3?

    • The gate threshold voltage for SI5401DC-T1-E3 is typically 1V.
  10. Does SI5401DC-T1-E3 require an external freewheeling diode?

    • No, SI5401DC-T1-E3 has an integrated freewheeling diode.