SI5435BDC-T1-E3

Product Overview

• Category: Power MOSFET
• Use: Switching and amplification in power management applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: DFN (Dual Flat No-Lead)
• Essence: Efficient power management
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Voltage Rating: 30V
• Current Rating: 12A
• On-Resistance: 6.5mΩ
• Gate Threshold Voltage: 1.5V
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

• Pin 1: Source
• Pin 2: Gate
• Pin 3: Drain
• Pin 4: Not connected

Functional Features

• Fast switching speed for improved efficiency
• Low on-resistance for reduced power dissipation
• Enhanced thermal performance for reliability

Advantages

• High efficiency in power management applications
• Compact DFN package for space-constrained designs
• Wide operating temperature range for versatility

Disadvantages

• Sensitive to static discharge, requiring proper handling
• Limited voltage and current ratings compared to some alternatives

Working Principles

The SI5435BDC-T1-E3 operates as a power MOSFET, utilizing its gate-source voltage to control the flow of current between the drain and source terminals. When the gate voltage is applied, it creates an electric field that modulates the conductivity of the channel, allowing for efficient switching and amplification.

Detailed Application Field Plans

• DC-DC Converters
• Motor Control
• Battery Management Systems
• LED Lighting
• Power Supplies

Detailed and Complete Alternative Models

• Infineon IPP60R190C6
• Vishay Si7157DP

This comprehensive entry provides a detailed overview of the SI5435BDC-T1-E3, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.