SI5445BDC-T1-E3

Product Overview

• Category: Power MOSFET
• Use: Switching and amplification in power management applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: DFN (Dual Flat No-Lead)
• Essence: Efficient power management
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Voltage Rating: 30V
• Current Rating: 9.7A
• On-Resistance: 10mΩ
• Power Dissipation: 2.5W
• Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Source
• Pin 3: Drain
• Pin 4: Source

Functional Features

• Fast switching speed for improved efficiency
• Low on-resistance for reduced power loss
• Enhanced thermal performance for reliability

Advantages and Disadvantages

• Advantages:
  • High efficiency
  • Low power dissipation
  • Reliable thermal performance
• Disadvantages:
  • Sensitive to static electricity
  • Limited voltage and current ratings

Working Principles

The SI5445BDC-T1-E3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of power management applications, including: - DC-DC converters - Motor control - Battery management systems - LED lighting

Detailed and Complete Alternative Models

• SI5446ADC-T1-GE3: Similar specifications with enhanced ESD protection
• SI5444BDC-T1-E3: Lower on-resistance with slightly reduced current rating

Note: The alternative models provided are for reference purposes and may require further evaluation based on specific application requirements.

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This content provides a comprehensive overview of the SI5445BDC-T1-E3 Power MOSFET, covering its basic information, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.