SI5481DU-T1-GE3

Introduction

The SI5481DU-T1-GE3 is a semiconductor product belonging to the category of power MOSFETs. This device is commonly used in various electronic applications due to its unique characteristics and performance. In this entry, we will provide an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the SI5481DU-T1-GE3.

Basic Information Overview

• Category: Power MOSFET
• Use: The SI5481DU-T1-GE3 is utilized as a switching component in power electronics applications such as voltage regulators, motor control, and DC-DC converters.
• Characteristics: This MOSFET exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power management systems.
• Package: The SI5481DU-T1-GE3 is typically available in a compact and thermally efficient PowerPAK® SO-8 package.
• Essence: The essence of this product lies in its ability to efficiently control and manage power flow in electronic circuits.
• Packaging/Quantity: It is commonly supplied in reels with a quantity of 3000 units per reel.

Specifications

• Voltage Rating: 30V
• Continuous Drain Current: 36A
• On-State Resistance: 4.5mΩ
• Gate Charge: 15nC
• Operating Temperature Range: -55°C to 150°C
• Package Type: PowerPAK® SO-8

Detailed Pin Configuration

The SI5481DU-T1-GE3 features a standard SO-8 pin configuration with the following pinout: 1. Gate 2. Source 3. Source 4. Drain 5. Drain 6. Source 7. Source 8. Gate

Functional Features

• Low On-State Resistance: Enables minimal power dissipation and high efficiency in power management applications.
• High Switching Speed: Facilitates rapid switching transitions, contributing to improved system performance.
• Low Gate Charge: Allows for efficient control of the MOSFET, reducing switching losses.

Advantages and Disadvantages

Advantages

• High efficiency in power management systems
• Fast switching speed
• Low power dissipation

Disadvantages

• Sensitive to voltage spikes and transients
• Requires careful consideration of gate drive circuitry

Working Principles

The SI5481DU-T1-GE3 operates based on the principles of field-effect transistors, where the control of current flow between the drain and source terminals is achieved through the modulation of the gate-source voltage.

Detailed Application Field Plans

The SI5481DU-T1-GE3 finds extensive use in the following application fields: - Voltage Regulators - Motor Control Systems - DC-DC Converters - Power Supplies

Detailed and Complete Alternative Models

• SI7469DP-T1-GE3: Similar power MOSFET with enhanced thermal performance
• SI7850DP-T1-GE3: Higher voltage rating power MOSFET for specific applications
• SI7147DP-T1-GE3: MOSFET with lower on-state resistance for ultra-efficient power management

In conclusion, the SI5481DU-T1-GE3 power MOSFET offers exceptional performance and reliability in power management applications, making it a preferred choice for engineers and designers seeking high-efficiency solutions.

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