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SI5858DU-T1-E3

SI5858DU-T1-E3

Product Overview

Category

SI5858DU-T1-E3 belongs to the category of power MOSFETs.

Use

It is used for switching and amplifying electronic signals in various applications, including power supplies, motor control, and lighting.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SI5858DU-T1-E3 is typically available in a surface-mount DFN package.

Essence

The essence of SI5858DU-T1-E3 lies in its ability to efficiently control and manage power in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with a quantity varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 9A
  • On-Resistance (RDS(ON)): 0.009 ohms
  • Power Dissipation (PD): 2.5W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI5858DU-T1-E3 typically has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • Low power dissipation
  • High efficiency
  • Enhanced thermal performance
  • ESD protection

Advantages

  • High voltage capability
  • Low on-resistance leads to reduced conduction losses
  • Fast switching speed allows for efficient operation
  • ESD protection enhances reliability

Disadvantages

  • Sensitive to overvoltage conditions
  • Requires careful handling during assembly due to its small package size

Working Principles

The SI5858DU-T1-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SI5858DU-T1-E3 is widely used in the following applications: - Switched-mode power supplies - Motor control circuits - LED lighting systems - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to SI5858DU-T1-E3 include: - SI7856DU-T2-E4 - SI6325DU-T1-GE3 - SI4892DU-T1-E3

In conclusion, the SI5858DU-T1-E3 power MOSFET offers high-performance characteristics suitable for various electronic applications, providing efficient power management and control.

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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng SI5858DU-T1-E3 trong giải pháp kỹ thuật

  1. What is the maximum voltage rating of SI5858DU-T1-E3?

    • The maximum voltage rating of SI5858DU-T1-E3 is typically 30V.
  2. What is the maximum continuous drain current for SI5858DU-T1-E3?

    • The maximum continuous drain current for SI5858DU-T1-E3 is typically 4.5A.
  3. What is the typical on-resistance of SI5858DU-T1-E3?

    • The typical on-resistance of SI5858DU-T1-E3 is 10mΩ.
  4. What are the recommended operating temperature range for SI5858DU-T1-E3?

    • The recommended operating temperature range for SI5858DU-T1-E3 is -55°C to 150°C.
  5. Is SI5858DU-T1-E3 suitable for automotive applications?

    • Yes, SI5858DU-T1-E3 is suitable for automotive applications.
  6. Does SI5858DU-T1-E3 have built-in ESD protection?

    • Yes, SI5858DU-T1-E3 has built-in ESD protection.
  7. What is the package type of SI5858DU-T1-E3?

    • SI5858DU-T1-E3 comes in a PowerPAK® SO-8 package.
  8. Can SI5858DU-T1-E3 be used in power management applications?

    • Yes, SI5858DU-T1-E3 can be used in power management applications.
  9. What is the gate threshold voltage of SI5858DU-T1-E3?

    • The gate threshold voltage of SI5858DU-T1-E3 is typically 2.5V.
  10. Is SI5858DU-T1-E3 RoHS compliant?

    • Yes, SI5858DU-T1-E3 is RoHS compliant.