SI7386DP-T1-GE3

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electronic signals in power applications - Characteristics: High efficiency, low on-resistance, fast switching speed - Package: DFN (Dual Flat No-leads) - Essence: Efficient power management - Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications: - Voltage Rating: 30V - Continuous Drain Current: 10A - On-Resistance: 8.5mΩ - Gate Threshold Voltage: 1.5V - Power Dissipation: 2.5W

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Source

Functional Features: - Fast switching speed for high-frequency applications - Low on-resistance for minimal power loss - Enhanced thermal performance for improved reliability

Advantages: - High efficiency in power management - Compact DFN package for space-constrained designs - Suitable for high-frequency switching applications

Disadvantages: - Sensitive to static electricity - Limited voltage and current ratings compared to larger packages

Working Principles: The SI7386DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current through the device. When a voltage is applied to the gate terminal, it creates an electric field that controls the conductivity between the source and drain terminals.

Detailed Application Field Plans: - DC-DC converters - Power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models: - Infineon IPP60R190C6 - Vishay Si7157DP

This comprehensive entry provides an in-depth understanding of the SI7386DP-T1-GE3 Power MOSFET, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.