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SI7462DP-T1-E3

SI7462DP-T1-E3

Product Overview

Category

The SI7462DP-T1-E3 belongs to the category of power MOSFETs.

Use

It is used as a switching device in various electronic circuits and power applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SI7462DP-T1-E3 is available in a compact and efficient PowerPAK® SO-8 package.

Essence

The essence of this product lies in its ability to efficiently control and switch high-power loads in electronic systems.

Packaging/Quantity

The product is typically packaged in reels with a quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 20A
  • On-Resistance (RDS(on)): 5.5mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 14nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI7462DP-T1-E3 has the following pin configuration: 1. GATE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. DRAIN 7. DRAIN 8. SOURCE

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for efficient operation
  • High voltage capability for versatile applications
  • Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages

  • Efficient power handling
  • Fast response time
  • Compact package size

Disadvantages

  • Sensitive to static discharge
  • Requires careful handling during assembly

Working Principles

The SI7462DP-T1-E3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SI7462DP-T1-E3 is commonly used in the following applications: - Switching power supplies - Motor control - Battery management systems - LED lighting - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the SI7462DP-T1-E3 include: - SI7462DP-T1-GE3 - SI7462DP-T1-WE3 - SI7462DP-T1-E3-ND

In conclusion, the SI7462DP-T1-E3 power MOSFET offers high-performance characteristics and is suitable for a wide range of power applications, making it a versatile choice for electronic system designers.

Word Count: 410

Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng SI7462DP-T1-E3 trong giải pháp kỹ thuật

  1. What is the maximum voltage rating of SI7462DP-T1-E3?

    • The maximum voltage rating of SI7462DP-T1-E3 is 30V.
  2. What is the typical on-resistance of SI7462DP-T1-E3?

    • The typical on-resistance of SI7462DP-T1-E3 is 6.5mΩ.
  3. What is the maximum continuous drain current of SI7462DP-T1-E3?

    • The maximum continuous drain current of SI7462DP-T1-E3 is 100A.
  4. What is the gate threshold voltage of SI7462DP-T1-E3?

    • The gate threshold voltage of SI7462DP-T1-E3 is typically 1.8V.
  5. What are the recommended operating temperature range for SI7462DP-T1-E3?

    • The recommended operating temperature range for SI7462DP-T1-E3 is -55°C to 150°C.
  6. Is SI7462DP-T1-E3 suitable for automotive applications?

    • Yes, SI7462DP-T1-E3 is suitable for automotive applications.
  7. Does SI7462DP-T1-E3 have overcurrent protection?

    • Yes, SI7462DP-T1-E3 features overcurrent protection.
  8. What is the package type of SI7462DP-T1-E3?

    • SI7462DP-T1-E3 comes in a PowerPAK® SO-8 package.
  9. Can SI7462DP-T1-E3 be used in high-frequency switching applications?

    • Yes, SI7462DP-T1-E3 can be used in high-frequency switching applications.
  10. Does SI7462DP-T1-E3 have ESD protection?

    • Yes, SI7462DP-T1-E3 is equipped with ESD protection.