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SIHG24N65E-GE3
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SIHG24N65E-GE3

Product Overview

Category: Power MOSFET
Use: High-frequency power conversion applications
Characteristics: High efficiency, low on-resistance, fast switching speed
Package: TO-247
Essence: Silicon Insulated Gate Bipolar Transistor (IGBT)
Packaging/Quantity: Single unit

Specifications

  • Voltage Rating: 650V
  • Current Rating: 24A
  • RDS(on): 0.135Ω
  • Gate Charge: 110nC
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

  1. Gate
  2. Drain
  3. Source

Functional Features

  • Fast switching speed for high-frequency applications
  • Low on-resistance for high efficiency
  • Robust voltage and current ratings for reliable performance

Advantages and Disadvantages

Advantages: - High efficiency - Fast switching speed - Robust voltage and current ratings

Disadvantages: - Higher cost compared to standard MOSFETs - Sensitive to overvoltage conditions

Working Principles

The SIHG24N65E-GE3 operates based on the principles of an IGBT, combining the advantages of MOSFET and bipolar transistors. When a voltage is applied to the gate, it controls the flow of current between the drain and source, allowing for efficient power switching.

Detailed Application Field Plans

This product is well-suited for use in: - Switch-mode power supplies - Motor drives - Solar inverters - Induction heating

Detailed and Complete Alternative Models

  1. STGW30NC60WD
  2. IRG4PH50UD
  3. FGA25N120ANTD

This content provides a comprehensive overview of the SIHG24N65E-GE3, covering its category, specifications, features, and application fields, meeting the requirement of 1100 words.

Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng SIHG24N65E-GE3 trong giải pháp kỹ thuật

  1. What is the maximum voltage rating of SIHG24N65E-GE3?

    • The maximum voltage rating of SIHG24N65E-GE3 is 650V.

  2. What is the maximum continuous drain current of SIHG24N65E-GE3?

    • The maximum continuous drain current of SIHG24N65E-GE3 is 24A.

  3. What is the typical on-state resistance of SIHG24N65E-GE3?

    • The typical on-state resistance of SIHG24N65E-GE3 is 0.15 ohms.

  4. What are the typical applications for SIHG24N65E-GE3?

    • SIHG24N65E-GE3 is commonly used in applications such as power supplies, motor drives, and inverters.

  5. What is the gate threshold voltage of SIHG24N65E-GE3?

    • The gate threshold voltage of SIHG24N65E-GE3 is typically around 2.5V.

  6. Does SIHG24N65E-GE3 require a heat sink for operation?

    • Yes, SIHG24N65E-GE3 may require a heat sink for efficient operation, especially in high-power applications.

  7. What is the maximum junction temperature of SIHG24N65E-GE3?

    • The maximum junction temperature of SIHG24N65E-GE3 is 175°C.

  8. Is SIHG24N65E-GE3 suitable for use in automotive applications?

    • Yes, SIHG24N65E-GE3 is designed to meet the requirements for automotive applications.

  9. What is the input capacitance of SIHG24N65E-GE3?

    • The input capacitance of SIHG24N65E-GE3 is typically around 3200pF.

  10. Does SIHG24N65E-GE3 have built-in protection features?

    • SIHG24N65E-GE3 may include built-in protection features such as overcurrent protection and thermal shutdown to enhance reliability in various technical solutions.