SIHH24N65EF-T1-GE3

Introduction

The SIHH24N65EF-T1-GE3 is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in various electronic applications due to its unique characteristics and performance. In this entry, we will provide an overview of the SIHH24N65EF-T1-GE3, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The SIHH24N65EF-T1-GE3 is used as a switching device in power supply, motor control, and other high-power applications.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The SIHH24N65EF-T1-GE3 is typically available in a TO-220AB package.
• Essence: Its essence lies in providing efficient power switching capabilities in various electronic circuits.
• Packaging/Quantity: It is commonly packaged in reels or tubes, with varying quantities based on manufacturer specifications.

Specifications

• Voltage Rating: 650V
• Current Rating: 24A
• On-State Resistance (RDS(on)): 0.165Ω
• Gate-Source Voltage (VGS): ±20V
• Package Type: TO-220AB
• Operating Temperature Range: -55°C to 150°C
• Mounting Type: Through Hole

Detailed Pin Configuration

The SIHH24N65EF-T1-GE3 typically has three pins: 1. Gate (G): Used to control the switching operation of the MOSFET. 2. Drain (D): Connected to the load in the circuit. 3. Source (S): Connected to the ground or return path of the circuit.

Functional Features

• Low On-State Resistance: Enables efficient power transfer and reduces conduction losses.
• High Switching Speed: Facilitates rapid switching transitions, suitable for high-frequency applications.
• Low Gate Charge: Allows for minimal drive power requirements and reduced switching losses.

Advantages and Disadvantages

Advantages

• High efficiency in power conversion applications.
• Suitable for high-frequency switching.
• Low power dissipation.

Disadvantages

• Sensitivity to voltage and current spikes.
• Requires careful consideration of driving circuitry to avoid damage.

Working Principles

The SIHH24N65EF-T1-GE3 operates based on the principle of field-effect transistors. When a sufficient voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. This enables the MOSFET to act as a switch, allowing or blocking the flow of power through the circuit.

Detailed Application Field Plans

The SIHH24N65EF-T1-GE3 finds extensive use in various applications, including: - Switched-mode power supplies - Motor control circuits - Renewable energy systems - Electric vehicle powertrains

Detailed and Complete Alternative Models

Some alternative models to the SIHH24N65EF-T1-GE3 include: - IRFH5300PBF - FDPF24N50T - STW26NM60N

In conclusion, the SIHH24N65EF-T1-GE3 power MOSFET offers high-performance characteristics suitable for a wide range of power electronics applications. Its efficient power switching capabilities, combined with its compact package, make it a popular choice among design engineers seeking reliable and high-performing semiconductor devices.

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