Xem thông số kỹ thuật để biết chi tiết sản phẩm.
SIHJ240N60E-T1-GE3
Product Overview
Category
The SIHJ240N60E-T1-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in power electronics applications such as power supplies, motor control, and inverters.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SIHJ240N60E-T1-GE3 is typically available in a TO-220 package.
Essence
This MOSFET is essential for efficient power management and control in various electronic systems.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Voltage Rating: 600V
- Current Rating: 240A
- RDS(ON): 0.065Ω
- Gate Charge: 180nC
- Operating Temperature: -55°C to 175°C
Detailed Pin Configuration
The SIHJ240N60E-T1-GE3 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High voltage capability allows for use in diverse applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in control systems.
Advantages and Disadvantages
Advantages
- High voltage capability
- Low on-resistance
- Fast switching speed
Disadvantages
- Higher gate charge compared to some alternative models
- May require additional heat dissipation measures at high currents
Working Principles
The MOSFET operates by controlling the flow of current between the drain and source terminals using the voltage applied to the gate terminal. When the gate-source voltage exceeds the threshold, the MOSFET turns on, allowing current to flow.
Detailed Application Field Plans
The SIHJ240N60E-T1-GE3 is well-suited for use in: - Industrial motor drives - Uninterruptible power supplies (UPS) - Solar inverters - Electric vehicle power systems
Detailed and Complete Alternative Models
Some alternative models to the SIHJ240N60E-T1-GE3 include: - IRFP4668PBF - FDPF33N25T - STW45NM50FD
In conclusion, the SIHJ240N60E-T1-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various power electronics applications. Its performance, characteristics, and application versatility make it a valuable component in modern electronic systems.
[Word count: 366]
Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng SIHJ240N60E-T1-GE3 trong giải pháp kỹ thuật
What is the maximum voltage rating of SIHJ240N60E-T1-GE3?
- The maximum voltage rating of SIHJ240N60E-T1-GE3 is 600V.
What is the maximum continuous drain current of SIHJ240N60E-T1-GE3?
- The maximum continuous drain current of SIHJ240N60E-T1-GE3 is 240A.
What is the on-state resistance of SIHJ240N60E-T1-GE3?
- The on-state resistance of SIHJ240N60E-T1-GE3 is typically 0.04 ohms.
What are the typical applications for SIHJ240N60E-T1-GE3?
- SIHJ240N60E-T1-GE3 is commonly used in high-power switching applications such as motor drives, inverters, and power supplies.
What is the gate threshold voltage of SIHJ240N60E-T1-GE3?
- The gate threshold voltage of SIHJ240N60E-T1-GE3 is typically 4V.
What is the maximum junction temperature of SIHJ240N60E-T1-GE3?
- The maximum junction temperature of SIHJ240N60E-T1-GE3 is 175°C.
Does SIHJ240N60E-T1-GE3 require a heat sink for operation?
- Yes, SIHJ240N60E-T1-GE3 typically requires a heat sink for efficient operation, especially in high-power applications.
What is the recommended gate drive voltage for SIHJ240N60E-T1-GE3?
- The recommended gate drive voltage for SIHJ240N60E-T1-GE3 is typically 10V.
Is SIHJ240N60E-T1-GE3 suitable for use in automotive applications?
- Yes, SIHJ240N60E-T1-GE3 is suitable for use in automotive applications due to its high power handling capabilities.
What are the key advantages of using SIHJ240N60E-T1-GE3 in technical solutions?
- The key advantages of using SIHJ240N60E-T1-GE3 include its high current and voltage ratings, low on-state resistance, and suitability for high-power applications.