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SIHP6N65E-GE3
Product Overview
Category
The SIHP6N65E-GE3 belongs to the category of power MOSFETs, which are electronic devices used for switching and amplifying electronic signals in various applications.
Use
This power MOSFET is commonly used in power supply units, motor control systems, and other high-power electronic circuits.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SIHP6N65E-GE3 is typically available in a TO-220AB package, which provides good thermal performance and ease of mounting.
Essence
The essence of this product lies in its ability to efficiently control high-power electrical signals with minimal losses.
Packaging/Quantity
The SIHP6N65E-GE3 is usually packaged in reels or tubes, with quantities varying based on customer requirements.
Specifications
- Voltage Rating: 650V
- Current Rating: 6A
- On-Resistance: 1.8Ω
- Gate Charge: 18nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SIHP6N65E-GE3 features a standard TO-220AB pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various high-power applications.
- Low on-resistance minimizes power losses and improves efficiency.
- Fast switching speed enables rapid control of electrical signals.
- Low gate charge facilitates efficient gate control and reduced drive circuit complexity.
Advantages
- Suitable for high-voltage applications
- Low power dissipation
- Enhanced efficiency in power management systems
Disadvantages
- May require additional heat sinking in high-power applications
- Sensitivity to static discharge
Working Principles
The SIHP6N65E-GE3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate voltage, the device can effectively switch high-power signals.
Detailed Application Field Plans
The SIHP6N65E-GE3 is well-suited for use in: - Switched-mode power supplies - Motor drives - Inverters - Power factor correction circuits - Electronic ballasts
Detailed and Complete Alternative Models
- IRFP460: Similar voltage and current ratings
- FDPF7N50NZ: Higher current rating
- STP6NK60ZFP: Comparable specifications
In conclusion, the SIHP6N65E-GE3 power MOSFET offers high-voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various high-power electronic applications.
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Liệt kê 10 câu hỏi và câu trả lời thường gặp liên quan đến ứng dụng SIHP6N65E-GE3 trong giải pháp kỹ thuật
What is the maximum drain-source voltage of SIHP6N65E-GE3?
- The maximum drain-source voltage of SIHP6N65E-GE3 is 650 volts.
What is the continuous drain current rating of SIHP6N65E-GE3?
- The continuous drain current rating of SIHP6N65E-GE3 is 6 amperes.
What is the on-state resistance (RDS(on)) of SIHP6N65E-GE3?
- The on-state resistance (RDS(on)) of SIHP6N65E-GE3 is typically 1.5 ohms.
What is the gate threshold voltage of SIHP6N65E-GE3?
- The gate threshold voltage of SIHP6N65E-GE3 is typically 2.5 volts.
Can SIHP6N65E-GE3 be used in high-frequency switching applications?
- Yes, SIHP6N65E-GE3 is suitable for high-frequency switching applications.
What is the maximum junction temperature of SIHP6N65E-GE3?
- The maximum junction temperature of SIHP6N65E-GE3 is 150 degrees Celsius.
Is SIHP6N65E-GE3 RoHS compliant?
- Yes, SIHP6N65E-GE3 is RoHS compliant.
What are the typical applications for SIHP6N65E-GE3?
- Typical applications for SIHP6N65E-GE3 include power supplies, motor control, and inverters.
Does SIHP6N65E-GE3 have built-in protection features?
- SIHP6N65E-GE3 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What is the package type of SIHP6N65E-GE3?
- SIHP6N65E-GE3 is available in a TO-220AB package.