SUM110N04-03P-E3

Product Overview

Category: Power MOSFET
Use: Switching and amplification in power electronics
Characteristics: High voltage capability, low on-resistance, fast switching speed
Package: TO-252 (DPAK)
Essence: Power management in various electronic applications
Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 40V
• Current Rating: 110A
• On-Resistance: 3.5mΩ
• Gate Threshold Voltage: 2V
• Power Dissipation: 200W

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for efficient operation
• High voltage capability for versatile applications

Advantages and Disadvantages

Advantages: - Efficient power management - Suitable for high current applications - Fast response time

Disadvantages: - Sensitive to overvoltage conditions - Requires careful thermal management

Working Principles

The SUM110N04-03P-E3 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET allows current to pass through, enabling power switching and amplification.

Detailed Application Field Plans

1. Motor Control: Utilized in motor drive circuits for efficient power control.
2. Switching Power Supplies: Enables high-efficiency power conversion in various electronic devices.
3. Inverter Systems: Facilitates effective energy conversion in renewable energy systems.

Detailed and Complete Alternative Models

1. IRF3205: Similar voltage and current ratings, different package type.
2. STP55NF06L: Comparable specifications, alternative footprint for space-constrained designs.
3. FDMS86181: Higher current rating, suitable for heavy-duty applications.

This comprehensive entry provides an in-depth understanding of the SUM110N04-03P-E3 Power MOSFET, covering its basic information, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

[Word Count: 274]