W25Q256FVCJQ TR

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High capacity
  • Fast read and write speeds
  • Low power consumption
• Package: SOP (Small Outline Package)
• Essence: High-performance flash memory for various applications
• Packaging/Quantity: Available in tape and reel packaging, quantity depends on customer requirements

Specifications

• Capacity: 256 Megabits (32 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Operations:
  • Sector Erase (4KB)
  • Block Erase (32KB or 64KB)
  • Chip Erase (Full)
• Read/Write Speed:
  • Continuous Read: Up to 80 MHz
  • Page Program: Up to 10 MHz
• Data Retention: More than 20 years

Detailed Pin Configuration

The W25Q256FVCJQ TR has a total of 8 pins:

1. CS (Chip Select): Used to enable/disable the device for communication.
2. DO (Data Output): Outputs data from the device during read operations.
3. WP (Write Protect): When held low, prevents write operations to the memory.
4. GND (Ground): Ground reference for the device.
5. DI (Data Input): Inputs data to the device during write operations.
6. CLK (Clock): Provides the clock signal for synchronous communication.
7. HOLD: Holds the device in a suspended state during certain operations.
8. VCC (Power Supply): Supplies power to the device.

Functional Features

• High-speed data transfer using the SPI interface.
• Efficient memory management with sector, block, and chip erase operations.
• Reliable data retention for long periods.
• Low power consumption, suitable for battery-powered devices.
• Wide operating temperature range for various environments.

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read and write speeds - Low power consumption - Long data retention period - Versatile erase options

Disadvantages: - Limited to SPI interface - Relatively small compared to other flash memory options

Working Principles

The W25Q256FVCJQ TR operates based on the principles of flash memory technology. It uses a floating gate transistor structure to store and retrieve data. When data is written, electrons are trapped in the floating gate, altering the transistor's conductive properties. This change can be detected during read operations, allowing the stored data to be retrieved.

Detailed Application Field Plans

The W25Q256FVCJQ TR is widely used in various electronic devices that require non-volatile data storage. Some application fields include:

1. Consumer Electronics: Used in smartphones, tablets, digital cameras, and gaming consoles for storing firmware, operating systems, and user data.
2. Automotive: Utilized in car infotainment systems, instrument clusters, and navigation systems for data storage and software updates.
3. Industrial Automation: Integrated into industrial control systems, PLCs (Programmable Logic Controllers), and HMI (Human-Machine Interface) devices for program storage and data logging.
4. IoT (Internet of Things): Incorporated into IoT devices such as smart home appliances, wearables, and sensor nodes for data storage and firmware updates.

Detailed and Complete Alternative Models

1. W25Q128FVSG TR: 128 Megabit (16 Megabyte) capacity, similar specifications, SOP package.
2. W25Q64JVSSIQ TR: 64 Megabit (8 Megabyte) capacity, similar specifications, SOIC package.
3. W25Q32JVSSIQ TR: 32 Megabit (4 Megabyte) capacity, similar specifications, SOIC package.

These alternative models provide different storage capacities while maintaining similar characteristics and package options.

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