onsemi (Ansemi)
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NCP5109BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V

NCP5109BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V
Mã sản phẩm
NCP5109BDR2G
Loại
Power Chip > Gate Driver IC
Nhà sản xuất/Thương hiệu
onsemi (Ansemi)
đóng gói
SOIC-8
đóng gói
taping
Số lượng gói
2500
Sự miêu tả
The NCP5109 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
Yêu cầu báo giá
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Trong kho 81488 PCS
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Từ khóa của NCP5109BDR2G
NCP5109BDR2G Linh kiện điện tử
NCP5109BDR2G Việc bán hàng
NCP5109BDR2G Nhà cung cấp
NCP5109BDR2G Nhà phân phối
NCP5109BDR2G Bảng dữ liệu
NCP5109BDR2G Ảnh
NCP5109BDR2G Giá
NCP5109BDR2G Lời đề nghị
NCP5109BDR2G Giá thấp nhất
NCP5109BDR2G Tìm kiếm
NCP5109BDR2G Thu mua
NCP5109BDR2G Chip