IXTH67N10

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high current applications
Characteristics: High voltage capability, low on-resistance, fast switching speed
Package: TO-247
Essence: Power MOSFET for high-current switching applications
Packaging/Quantity: Available in reels of 50 units

Specifications

• Voltage Rating: 100V
• Continuous Drain Current: 67A
• RDS(ON): 10mΩ
• Gate Threshold Voltage: 2.5V
• Maximum Power Dissipation: 300W
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• Low on-resistance for minimal power dissipation
• Fast switching speed for efficient operation
• High voltage capability for versatile applications

Advantages

• High current handling capability
• Low on-resistance for reduced power loss
• Versatile applications due to high voltage rating

Disadvantages

• Higher cost compared to lower-rated MOSFETs
• Larger package size may not be suitable for compact designs

Working Principles

The IXTH67N10 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET allows a high current to flow through it with minimal resistance.

Detailed Application Field Plans

1. Power Supplies: Utilized in high-power switch-mode power supplies for efficient energy conversion.
2. Motor Control: Employed in motor drive circuits for controlling high-current motors.
3. High Current Applications: Used in various high current applications such as welding equipment and battery management systems.

Detailed and Complete Alternative Models

1. IXTH63N10: Similar specifications with a slightly lower continuous drain current of 63A.
2. IXTH60N10: Lower continuous drain current at 60A but with similar voltage and on-resistance characteristics.

This comprehensive entry provides an in-depth understanding of the IXTH67N10 Power MOSFET, including its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.